Embedded Capacitor Transistor for High Integration
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Solution Overview
Problem
Current semiconductor devices face challenges in miniaturization, integration, and achieving favorable electrical characteristics, high on-state current, and long data retention with low power consumption.
Innovation Solution
A semiconductor device design incorporating a transistor and capacitor embedded in an interlayer film, where the transistor includes a semiconductor layer, gate, source, and drain, and the capacitor is placed in an opening reaching the source or drain, with an insulator between the capacitor electrode and the interlayer film, utilizing an oxide semiconductor for low leakage current and high reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor using oxide semiconductor is employed to reduce leakage current, then power consumption is reduced and data retention is improved, but device area and integration density are constrained
Solution Approach 1:
The invention transitions from planar capacitor configuration to a three-dimensional structure where the capacitor is formed within an opening that extends vertically through the interlayer film. This vertical dimension allows the capacitor electrodes to overlap with the transistor source/drain regions, achieving high capacitance density without increasing planar device area.
Solution Approach 2:
The capacitor structure is nested within the interlayer film opening, with the first capacitor electrode extending along the side surface and bottom surface of the opening. This nesting approach allows the capacitor to be integrated within the existing transistor structure, maximizing space utilization and reducing overall device footprint.
2Productivity
If device miniaturization is pursued to increase integration density, then productivity and compactness are improved, but manufacturing precision and electrical characteristics deteriorate
Solution Approach 1:
The interlayer film serves multiple functions: it provides mechanical support, electrical insulation, and structural definition for the capacitor opening. The opening structure simultaneously accommodates the capacitor electrodes and maintains alignment with the transistor source/drain regions, reducing the number of separate manufacturing steps and improving precision.
Solution Approach 2:
The capacitor electrode is positioned with specific local geometry along the side surface and bottom surface of the opening, creating optimized electric field distribution. This local structural quality ensures favorable electrical characteristics while maintaining compact overall dimensions for high integration density.
3Power
If capacitor electrode is placed in contact with source or drain, then coupling efficiency is improved, but risk of short circuit and reliability issues increases
Solution Approach 1:
The insulator material fills the space between the first capacitor electrode and the interlayer film, serving as an intermediary that provides electrical isolation. This prevents direct contact between conductive elements that would cause short circuits, while still allowing capacitive coupling through the insulator for efficient signal transfer.
Solution Approach 2:
The capacitor electrode geometry is designed asymmetrically, extending preferentially along the side surface of the opening rather than uniformly in all directions. This asymmetric configuration optimizes the electric field distribution for coupling efficiency while maintaining adequate insulation clearance to prevent short circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables miniaturization, high integration, favorable electrical characteristics, high on-state current, and long data retention with reduced power consumption, while maintaining high reliability and flexibility.
Implementation Method 1
a transistor using an oxide semiconductor has an extremely low leakage current in an off state
Implementation Method 2
a transistor using an oxide semiconductor has an extremely low leakage current in an off state
Implementation Method 3
a capacitor, an electrode, and an interlayer film. The transistor includes a semiconductor layer, a gate, a source, and a drain
Data Source
AI summary
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, an electrode, and an interlayer film. The transistor includes a semiconductor layer, a gate, a source, and a drain; the transistor and the capacitor are placed to be embedded in the interlayer film. Below the semiconductor layer, one of the source and the drain is in contact with the electrode. Above the semiconductor layer, the other of the source and the drain is in contact with one electrode of the capacitor.