Embedded Capacitor Formation in Semiconductor Devices
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Solution Overview
Problem
As semiconductor devices shrink and density increases, it becomes challenging to form capacitors effectively in embedded DRAM (EDRAM) devices, requiring an improved fabrication process to maintain performance and reduce costs.
Innovation Solution
A semiconductor device fabrication process involving the formation of a contact plug with a recess in the dielectric layer, where a capacitor element is integrated within the recess, simplifying the formation process and reducing complexity, cost, and size while improving reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional capacitor formation processes are used in EDRAM devices, then capacitor functionality is achieved, but fabrication complexity and cost increase as feature sizes shrink
Solution Approach 1:
The patent merges the capacitor formation process with the existing contact plug formation process. The capacitor electrode is formed simultaneously with the contact plug structure, eliminating separate fabrication steps. This integration reduces manufacturing complexity while maintaining precision, as both structures are created using the same deposition and patterning processes.
Solution Approach 2:
The contact plug structure serves dual functions: as an electrical connection element and as a capacitor electrode. This multi-functional design allows the same structural feature to fulfill multiple roles in the EDRAM device, simplifying the overall fabrication process and reducing the number of specialized steps required.
2Productivity
If feature sizes are reduced to increase density, then production efficiency improves, but capacitor formation becomes more difficult
Solution Approach 1:
By combining capacitor electrode formation with contact plug formation, the patent enables both structures to be created in the same fabrication cycle. This approach maintains ease of manufacture at reduced feature sizes, as the merged process leverages existing process capabilities rather than requiring new, more complex fabrication techniques.
Solution Approach 2:
The patent adjusts material parameters and deposition conditions to enable capacitor electrode formation at reduced feature sizes. By optimizing the conductive material properties and formation parameters, the process maintains ease of manufacture even as dimensional parameters are reduced to increase device density.
3Reliability
If complex crown structures are formed for capacitors, then capacitor performance is improved, but fabrication time and cost increase
Solution Approach 1:
The patent merges capacitor electrode formation with contact plug formation into a single integrated process. This eliminates the need for separate, time-consuming crown structure fabrication steps while maintaining capacitor reliability through the unified process approach that ensures proper electrical connections and structural integrity.
Solution Approach 2:
The capacitor electrode is formed preliminarily as part of the contact plug structure during earlier fabrication stages. This preliminary formation allows subsequent processing steps to proceed without additional capacitor-specific operations, reducing overall fabrication time while ensuring proper capacitor performance through advance structural preparation.
Data Source
AI summary
A method for forming a semiconductor device is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming a contact plug in the dielectric layer. The method also includes partially removing the contact plug to form a recess over the contact plug. The method further includes forming a capacitor element in the recess.