Embedded Chip Substrate Layout for High-Voltage Leakage Control

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Solution Overview

Problem

Existing semiconductor apparatuses face challenges in achieving high voltage resistance, weight reduction, and efficient power performance, particularly in applications requiring high output and efficient heat dissipation.

Innovation Solution

A semiconductor apparatus design featuring a wiring board with a through-hole containing a semiconductor chip and substrate, sealed by a silicon nitride-insulated layer, where the insulating layer protrudes beyond conductive layers to prevent electrical leakage and enhance thermal conductivity, combined with a conductive structure for efficient heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional insulating structures are used in semiconductor apparatus, then manufacturing is simpler, but voltage resistance is insufficient and electrical leakage occurs

Engineering Contradiction:
Improvevoltage resistanceVSAvoidinsulating layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating layer is extended in the planar dimension beyond the conductive layers, creating an overlapping structure that blocks electrical leakage paths without increasing vertical complexity. This dimensional extension provides voltage resistance by preventing arc discharge between adjacent conductive layers.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs a composite structure combining insulating material layers with conductive layers, where the insulating layer has both electrical insulation properties and controlled thickness to achieve both voltage resistance and thermal conductivity requirements simultaneously.

Inventive Principle:
Principle #40Composite materials

2Reliability

If thicker insulating layers are used to prevent electrical leakage, then voltage resistance improves, but heat dissipation capability deteriorates

Engineering Contradiction:
Improveelectrical insulationVSAvoidheat dissipation
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The insulating layer thickness is optimized locally - sufficiently thick in regions where electrical insulation is critical to prevent leakage, while maintaining thinner sections where thermal conduction paths are needed. This local optimization balances electrical insulation and heat dissipation requirements.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The insulating layer serves as an intermediary structure that simultaneously provides electrical insulation and thermal conduction functions by carefully controlling its material composition and thickness, acting as a mediator between electrical and thermal performance requirements.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Power

If conventional substrate structures are used, then manufacturing is easier, but weight reduction and power performance are limited

Engineering Contradiction:
Improvepower performanceVSAvoidsubstrate structure
Core Design Contradiction:
PowerVSEase of manufacture

Solution Approach 1:

The substrate structure is segmented into multiple functional layers including conductive layers, insulating layers, and sealing members, with each layer performing a specific function. This segmentation enables optimized power performance through controlled electrical and thermal paths while maintaining manufacturability through standardized layer fabrication processes.

Inventive Principle:
Principle #1Segmentation

4Reliability

If additional sealing structures are added to prevent electrical leakage, then voltage resistance improves, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improveelectrical leakage preventionVSAvoidsealing structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating layer is designed to perform multiple functions simultaneously: providing electrical insulation, preventing arc discharge, and serving as a sealing barrier. This multi-functionality eliminates the need for separate dedicated sealing structures, reducing overall device complexity while maintaining voltage resistance.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design achieves high voltage resistance, weight reduction, and improved power performance, enabling increased battery voltage and reduced charging times in electric vehicles, while minimizing heat generation and simplifying cooling mechanisms.

Implementation Method 1

a first insulating layer on the first conductive layer, and a second conductive layer on the first insulating layer

Methodology Applied
Scientific EffectElectrical insulation: Dielectric

Implementation Method 2

combined with a conductive structure for efficient heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20260075923A1Semiconductor apparatus
Publication Date: 2026.03.12 KK TOSHIBA
  • US20260075923A1 patent drawing
  • US20260075923A1 patent drawing
  • US20260075923A1 patent drawing

AI summary

According to one embodiment, a semiconductor apparatus includes: a wiring board having a first through-hole; a first substrate including a first conductive layer, a first insulating layer on the first conductive layer, and a second conductive layer on the first insulating layer, the first substrate being provided in the first through-hole; a first semiconductor chip provided on the first substrate in the first through-hole; and a sealing member that covers the first substrate and the first semiconductor chip in the first through-hole, wherein a first dimension of the first insulating layer in a first direction parallel to a surface of the first substrate is larger than a second dimension of the first conductive layer in the first direction and a third dimension of the second conductive layer in the first direction.