Embedded Conductive Bump in Semiconductor Passivation
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Solution Overview
Problem
Miniaturization of semiconductor devices leads to increased complexity and stress due to thermal expansion mismatches and bonding issues, causing cracks and reliability problems in semiconductor structures.
Innovation Solution
A semiconductor structure design featuring a conductive bump partially embedded in a conductive pad, with a recess extending through the passivation layer and into the pad, and a bump pad disposed over the passivation layer within the recess, to reduce stress and prevent crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If semiconductor devices are miniaturized to reduce physical size, then device density and integration are improved, but manufacturing complexity and stress from thermal expansion mismatches increase
Solution Approach 1:
The patent divides the bonding interface into multiple functional layers: a first bonding layer with first bonding pads, a second bonding layer with second bonding pads, and intermediate structures. This segmentation allows each layer to handle specific stress and thermal expansion characteristics independently, reducing overall manufacturing complexity despite miniaturization
Solution Approach 2:
The patent applies different material properties and structural characteristics to different regions of the bonding interface. The first and second bonding layers have distinct compositions and properties tailored to their specific locations, allowing localized optimization that simplifies the overall manufacturing process while maintaining device integrity
2Adaptability or versatility
If multiple components with different materials are integrated to increase functionality, then device capability is improved, but crack development due to CTE mismatch and bonding stress increases
Solution Approach 1:
The patent modifies the bonding interface structure by introducing multiple bonding layers with different material compositions and thermal expansion properties. This parameter changes approach allows the structure to accommodate CTE mismatches between different components, preventing crack development while maintaining high functionality
Solution Approach 2:
The patent employs composite material structures in the bonding layers, combining materials with different thermal and mechanical properties. This composite approach creates a gradient that smoothly transitions between components with different CTE values, enhancing reliability without sacrificing device capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively minimizes and prevents crack formation, enhancing the reliability of semiconductor structures by distributing stress and reducing warpage caused by thermal expansion mismatches and chip package interactions.
Implementation Method 1
development of cracks due to mismatch of coefficients of thermal expansion (CTE) and bonding stress
Data Source
AI summary
The present disclosure provides a semiconductor structure, including a substrate, a conductive pad, a passivation layer, a recess, a bump pad, and a conductive bump. The conductive pad is disposed over the substrate. The passivation layer is disposed over the substrate and partially covers the conductive pad. The recess extends through the passivation layer and extends at least partially into the conductive pad. The bump pad is disposed over the passivation layer and within the recess; and the conductive bump is disposed over the bump pad. A method of manufacturing the semiconductor structure is also provided.