Embedded Cooling Channels in Power Electronics Assemblies

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Solution Overview

Problem

Conventional heat sinks fail to adequately manage heat in power electronics due to increased heat flux, leading to elevated operating temperatures and additional thermal resistance from bonding layers and materials.

Innovation Solution

Integration of a semiconductor fluid channel system within power electronics assemblies, featuring a substrate layer with inlet and outlet ports and metallization layers along the inner surfaces of semiconductor fluid channels, allowing for direct circulation of dielectric cooling fluid to enhance heat removal and reduce thermal resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional heat sinks are used to remove heat from power electronics, then heat removal capability is limited, but thermal resistance increases due to additional bonding layers and thermal interface materials

Engineering Contradiction:
Improveoperating temperatureVSAvoidthermal resistance
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent merges the cooling function directly into the semiconductor device by integrating fluid channels within the device structure itself, eliminating the need for separate heat sinks and thermal interface materials. This integration removes additional thermal resistance layers while maintaining effective heat removal from the heat-generating regions.

Inventive Principle:
Principle #5Merging (Combining)

2Power

If power electronics operate at increased power levels, then electrical performance improves, but heat flux increases making thermal management challenging

Engineering Contradiction:
Improvepower levelVSAvoidheat flux
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent transitions from conventional external cooling to internal cooling by embedding fluid channels within the semiconductor device structure. This dimensional integration allows heat to be removed directly at the source through channels positioned within the heat-generating regions, enabling effective thermal management at increased power levels.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Loss of energy

If additional bonding layers and thermal interface materials are added to conventional heat sinks, then heat removal capability is enhanced, but thermal resistance increases substantially

Engineering Contradiction:
Improveheat removal capabilityVSAvoidthermal resistance
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the unnecessary bonding layers and thermal interface materials from the conventional heat sink configuration. By integrating cooling channels directly within the semiconductor device, the design removes these intermediate thermal resistance layers while maintaining effective heat removal capability.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The integrated fluid channel system effectively lowers thermal resistance and maintains or improves electrical performance by directly addressing heat removal at the semiconductor device, while reducing electrical on-resistance and enhancing cooling efficiency.

Implementation Method 1

Cooling fluid may be used to receive heat generated by the heat generating device by convective thermal transfer

Methodology Applied
Scientific EffectConvective thermal transfer: Convection

Implementation Method 2

a fluid channel metallization layer positioned along the inner surface of the semiconductor fluid channel

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS10121729B2Power electronics assemblies having a semiconductor device with metallized embedded cooling channels
Publication Date: 2018.11.06 TOYOTA JIDOSHA KK
  • US10121729B2 patent drawing
  • US10121729B2 patent drawing
  • US10121729B2 patent drawing

AI summary

A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate layer that extends from the first device surface to a substrate-drift interface, a semiconductor drift layer that extends from the substrate-drift interface towards the second device surface, and a semiconductor fluid channel is positioned within the semiconductor substrate layer of the semiconductor device. Further, the semiconductor fluid channel includes an inner surface. Moreover, a fluid channel metallization layer is positioned along the inner surface of the semiconductor fluid channel.