Embedded Semiconductor Die Heat Dissipation Layer

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Solution Overview

Problem

Semiconductor devices generate excessive heat, which can decrease their performance, and existing heat dissipation methods are inadequate to effectively manage this issue.

Innovation Solution

An electronic component is designed with a dielectric core layer embedding a semiconductor die, electrically coupled to contact pads on one side and a heat dissipation layer with isotropic thermal conductivity on the other side, thermally coupled to the semiconductor die, to efficiently dissipate heat.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a heat dissipation component is added to reduce heat effects, then device performance is improved, but device complexity increases

Engineering Contradiction:
Improvedevice performanceVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The heat dissipation layer is merged with the dielectric core layer to form an integrated package structure. The heat dissipation layer becomes part of the substrate assembly, eliminating the need for separate heat dissipation components and reducing overall device complexity while maintaining effective heat management

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dielectric core layer serves multiple functions: it provides electrical insulation, mechanical support, and thermal management. By integrating the heat dissipation function into the dielectric substrate, the structure achieves multi-functionality without adding extra components

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Temperature

If the heat dissipation layer thickness is increased to improve heat dissipation, then heat dissipation effectiveness is improved, but device dimensions increase

Engineering Contradiction:
Improveheat dissipation effectivenessVSAvoiddevice dimensions
Core Design Contradiction:
TemperatureVSLength of stationary object

Solution Approach 1:

The patent specifies that the heat dissipation layer thickness is between 0.5 to 2 times the semiconductor die thickness, optimizing the thermal management effectiveness while controlling the overall package height. This parameter optimization allows effective heat dissipation without excessive dimensional increase

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The heat dissipation layer uses materials with high thermal conductivity (such as copper, aluminum, or aluminum alloys) to achieve efficient heat dissipation with reduced layer thickness, thereby minimizing the increase in device dimensions while maintaining thermal performance

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces heat buildup in semiconductor devices, improving their performance by providing a robust heat dissipation mechanism that matches or exceeds the thickness of the semiconductor die.

Implementation Method 1

a heat dissipation layer arranged on a second side of the dielectric core layer and thermally coupled to the semiconductor die. The heat dissipation layer includes a material with a substantially isotropic thermal conductivity

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS10032688B2Electronic component and method for dissipating heat from a semiconductor die
Publication Date: 2018.07.24 INFINEON TECH AUSTRIA AG
  • US10032688B2 patent drawing
  • US10032688B2 patent drawing
  • US10032688B2 patent drawing

AI summary

In an embodiment, an electronic component includes a dielectric core layer having a thickness, at least one semiconductor die embedded in the dielectric core layer and electrically coupled to at least one contact pad arranged on a first side of the dielectric core layer, and a heat dissipation layer arranged on a second side of the dielectric core layer and thermally coupled to the semiconductor die. The semiconductor die has a thickness that is substantially equal to, or greater than, or equal to the thickness of the dielectric core layer. The heat dissipation layer includes a material with a substantially isotropic thermal conductivity.