Embedded eFuse Structure for Lower-Voltage IC Programming
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Solution Overview
Problem
Conventional efuse structures in semiconductor ICs require large breakdown voltages and occupy significant space, leading to reduced IC density and performance.
Innovation Solution
A semiconductor device structure with a fuse structure embedded within a substrate, featuring a fuse electrode with a lateral surface protruding toward word lines, allowing for parallel electrical coupling and reduced resistance, enabling the fuse to be blown out with a smaller voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional efuse structures are used with dielectric layers, then the fuse can be programmed by breakdown, but the device requires large breakdown voltage and occupies large space
Solution Approach 1:
The fuse electrode transitions from a planar structure to a three-dimensional structure with lateral surfaces protruding toward word lines. This dimensional change enables reduced resistance and lower programming voltage while maintaining compact footprint on the substrate
Solution Approach 2:
The fuse structure is embedded within the substrate with the fuse electrode nested among word lines. The lateral surfaces of the fuse electrode protrude toward the word lines, creating a nested configuration that reduces space occupation while maintaining electrical coupling
2Reliability
If conventional efuse structures are used with dielectric layers, then the fuse can be programmed by breakdown, but the device requires large breakdown voltage
Solution Approach 1:
The fuse electrode geometry is changed from a conventional planar shape to a three-dimensional structure with lateral surfaces protruding toward word lines. This parameter change in shape and spatial configuration reduces the resistance between the fuse electrode and word lines, thereby reducing the breakdown voltage required for programming
Solution Approach 2:
By transitioning to a three-dimensional fuse electrode structure with lateral surfaces, the electrical coupling with word lines is enhanced through additional contact surfaces. This dimensional change reduces the effective resistance and required programming voltage
3Reliability
If conventional efuse structures occupy large space, then the programming function is maintained, but the IC density is reduced
Solution Approach 1:
The fuse structure is embedded within the substrate with nested configuration among word lines. The lateral surfaces of the fuse electrode protrude toward the word lines, enabling efficient electrical coupling within a compact volume, thereby increasing IC density while maintaining programming function
Solution Approach 2:
The three-dimensional fuse electrode structure utilizes vertical and lateral dimensions to achieve compact integration. By protruding lateral surfaces toward word lines, the structure maintains effective electrical coupling while occupying minimal substrate area, thus improving IC density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure enables efficient programming with lower voltage requirements and increased density due to parallel word line coupling, enhancing semiconductor device performance.
Implementation Method 1
A programing current is applied to blow the dielectric layer, thus changing the resistivity of the eFuse. This is referred to as 'programming' the eFuse. However, such structure requires a relatively large breakdown voltage
Data Source
AI summary
A semiconductor device structure and a method of manufacturing the same are provided. The semiconductor device structure includes a substrate, a fuse structure, and a first word line. The fuse structure includes a fuse electrode disposed within the substrate. The first word line is electrically coupled to the fuse structure. The first word line is disposed within the substrate and spaced apart from the fuse electrode of the fuse structure. The fuse electrode has a lateral surface protruding toward the first word line.