Embedded eFuse Electrode Layout for Lower Programming Voltage
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Solution Overview
Problem
Conventional efuse structures in semiconductor ICs require large breakdown voltages and occupy significant space, limiting the density and performance of integrated circuits.
Innovation Solution
A semiconductor device structure with a fuse structure embedded within a substrate, featuring a fuse electrode with a lateral surface protruding towards a word line, allowing for parallel electrical coupling with multiple word lines, which reduces resistance and enables blowing of the fuse with a smaller voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional eFuse structure is used with dielectric layer on substrate, then eFuse can be programmed by applying breakdown voltage, but the structure requires relatively large breakdown voltage which adversely affects semiconductor device performance
Solution Approach 1:
The fuse electrode is extended in the vertical dimension by forming it as a protruding structure that extends from the first substrate surface toward the second substrate surface. This dimensional change reduces the lateral distance between the fuse electrode and the word line, thereby reducing the breakdown voltage required for programming the eFuse while maintaining reliable programming capability.
2Reliability
If conventional eFuse structure is used with dielectric layer on substrate, then eFuse programming is achieved, but the structure occupies relatively large space over the substrate reducing IC density
Solution Approach 1:
The eFuse structure is transitioned from a planar layout to a three-dimensional configuration where the fuse electrode protrudes vertically between substrates. This allows the word line to be positioned closer to the fuse electrode in the vertical dimension rather than requiring additional lateral space, thereby reducing the area occupied on the substrate and increasing IC density while maintaining programming reliability.
3Power
If fuse electrode has lateral surface protruding toward word line, then resistance between fuse and word line is reduced enabling smaller voltage to blow fuse, but the structure becomes more complex
Solution Approach 1:
The fuse electrode is formed as a protruding structure that is integrated within the existing substrate and word line architecture. The protrusion is nested within the vertical space between substrates, utilizing the existing structural framework rather than adding separate external components. This reduces the voltage required to blow the fuse by decreasing resistance while minimizing the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a smaller voltage to blow the fuse structure, enhancing the performance and density of semiconductor devices by reducing the resistance between the fuse and word lines, enabling more efficient operation.
Implementation Method 1
A programing current is applied to blow the dielectric layer, thus changing the resistivity of the eFuse. This is referred to as 'programming' the eFuse. However, such structure requires a relatively large breakdown voltage
Data Source
AI summary
A semiconductor device structure and a method of manufacturing the same are provided. The semiconductor device structure includes a substrate, a fuse structure, and a first word line. The fuse structure includes a fuse electrode disposed within the substrate. The first word line is electrically coupled to the fuse structure. The first word line is disposed within the substrate and spaced apart from the fuse electrode of the fuse structure. The fuse electrode has a lateral surface protruding toward the first word line.