Embedded Electrode Avalanche Multiplication for Low Power Detection
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Solution Overview
Problem
Photoelectric conversion apparatuses using avalanche diodes have high power consumption due to the requirement of a large potential difference to generate a strong electric field for avalanche multiplication, leading to inefficient energy use.
Innovation Solution
The apparatus includes a semiconductor substrate with a first and second conductivity type region, an embedded electrode, and an insulation member, where the potential difference between the regions is set to prevent avalanche multiplication at the p-n junction, allowing it to occur only between the embedded electrode and the second semiconductor region, reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a large potential difference is applied to generate a strong electric field for avalanche multiplication, then signal detection capability is improved, but power consumption increases
Solution Approach 1:
The patent divides the avalanche multiplication function into two separate locations: the p-n junction interface and the embedded electrode. By segmenting the avalanche multiplication process, the patent enables signal carriers to be generated at the p-n junction and then multiplied at the embedded electrode, which is positioned deeper in the semiconductor substrate. This segmentation allows the strong electric field to be localized only at the embedded electrode rather than requiring a large potential difference across the entire p-n junction, thereby reducing power consumption while maintaining signal detection capability.
Solution Approach 2:
The patent introduces a depth dimension by embedding the electrode deeper in the semiconductor substrate below the p-n junction interface. This dimensional change allows the electric field to be concentrated at a specific depth rather than distributed across the junction interface. The embedded electrode creates a localized strong electric field region at depth, enabling avalanche multiplication to occur there instead of requiring a large potential difference across the entire junction, thus reducing power consumption while maintaining detection capability.
2Measurement precision
If avalanche multiplication occurs at the p-n junction, then charge detection is achieved, but energy efficiency deteriorates
Solution Approach 1:
The patent extracts the avalanche multiplication function from the p-n junction interface and relocates it to the embedded electrode positioned deeper in the semiconductor substrate. The p-n junction is responsible only for generating signal carriers through photoelectric conversion, while the embedded electrode performs the avalanche multiplication. This extraction of the multiplication function from the junction reduces the potential difference required at the junction, thereby improving energy efficiency while maintaining charge detection capability.
Solution Approach 2:
The embedded electrode acts as an intermediary structure between the p-n junction and the external circuit. It receives signal carriers generated at the p-n junction, provides a localized strong electric field for avalanche multiplication, and then outputs the multiplied signal. This intermediary embedded electrode enables efficient charge detection by concentrating the energy-intensive multiplication process in a localized region rather than requiring continuous high potential difference across the entire junction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces power consumption by minimizing avalanche multiplication across the p-n junction, achieving lower energy usage compared to traditional designs.
Implementation Method 1
A potential difference between the embedded electrode and the second semiconductor region is a potential difference at which avalanche multiplication occurs between the embedded electrode and the second semiconductor region
Data Source
AI summary
A photoelectric conversion apparatus includes a semiconductor substrate, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an embedded electrode, and an insulation member arranged between the embedded electrode and the first semiconductor region and the second semiconductor region. A deepest portion of the embedded electrode is arranged at a position deeper than a p-n junction surface of the first semiconductor region and the second semiconductor region. A potential difference between the first semiconductor region and the second semiconductor region is a potential difference at which avalanche multiplication does not occur, and a potential difference between the embedded electrode and the second semiconductor region is a potential difference at which avalanche multiplication occurs.