Embedded Fan-Out Conductive Layer for Peel-Resistant Packaging
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Solution Overview
Problem
The existing fan-out structures in semiconductor device packages with narrow conductive layers traversing long distances are prone to peeling off during formation, disrupting the connection between embedded semiconductor dies and motherboards.
Innovation Solution
The implementation of a semiconductor device package with a dielectric layer, an electronic component, and a conductive element where the conductive layer is embedded within the dielectric layer and has an exposed portion, reducing the risk of peeling by minimizing the surface area exposed during the flash etch process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a fan-out structure with a narrow conductive layer is used to connect embedded semiconductor die with motherboard, then the pitch of embedded semiconductor die can be reduced, but the conductive layer may be peeled off during formation
Solution Approach 1:
The conductive layer is transitioned from a surface-level structure to an embedded structure within the dielectric layer. This dimensional change embeds the conductive layer in the third dimension (depth), providing mechanical support from the surrounding dielectric material and preventing peeling during the formation process while maintaining narrow pitch dimensions.
Solution Approach 2:
The conductive layer is nested within the dielectric layer, creating a protected internal structure. The dielectric material surrounds and supports the conductive layer, similar to nested dolls, providing structural integrity and preventing the conductive layer from peeling off during manufacturing processes.
2Reliability
If the conductive layer is embedded in the dielectric layer, then the risk of peeling is reduced, but the connection length increases
Solution Approach 1:
The conductive layer is changed from a narrow, surface-level trace to a broader, embedded structure within the dielectric layer. This parameter change in geometry and positioning allows the conductive layer to maintain electrical connection functionality while gaining mechanical support from the surrounding dielectric material, preventing peeling without proportionally increasing connection length.
3Area of moving object
If a narrow conductive layer traverses a long distance, then the pitch can be reduced, but the conductive layer is more prone to damage during formation
Solution Approach 1:
The conductive layer is positioned in a different dimension by embedding it within the dielectric layer rather than placing it on the surface. This dimensional relocation protects the narrow, long-distance conductive path from mechanical damage during formation processes while maintaining the required pitch dimensions for high-density packaging.
Solution Approach 2:
The dielectric layer serves as a protective cushion surrounding the conductive layer before any damage can occur. This pre-existing protective structure absorbs mechanical stresses and prevents damage to the narrow conductive layer during the formation process, enabling long-distance connections without increased susceptibility to harm.
Data Source
AI summary
A semiconductor device package and method for manufacturing the same are provided. The semiconductor device package includes a dielectric layer, an electronic component, a first conductive layer, and a conductive element. The dielectric layer has a first surface and a second surface opposite to the first surface. The electronic component is embedded in the dielectric layer. The first conductive layer is embedded in the dielectric layer and adjacent to the first surface of the dielectric layer. The conductive element is disposed on the first surface of the dielectric layer and in contact with the first conductive layer.