Embedded Filler Particles for Electric Field Control in Semiconductor Packages
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face premature failure due to high electrical field strengths that can lead to wear and failure of device components, particularly in regions with significant voltage differences between the chip carrier and semiconductor chip.
Innovation Solution
Incorporating filler particles with a semiconductor material having a band gap in the range of 2.3 eV to 3.6 eV into the intermediate layer or encapsulation material, which increases electrical conductivity from 10−16 S/m to 10−2 S/m when electric field strength exceeds 5 V/μm, reducing localized electric field strengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high electrical voltage differences occur between chip carrier and semiconductor chip, then electrical potential differences increase, but electric field strengths become excessively high causing component wear and device failure
Solution Approach 1:
An intermediate layer is introduced between the chip carrier and semiconductor chip to mediate the electrical field interaction. This intermediate layer acts as a buffer that reduces peak electric field strengths while maintaining necessary electrical potential differences, thereby preventing component wear and failure.
Solution Approach 2:
The electrical conductivity of the intermediate layer or encapsulation material is dynamically adjusted by incorporating filler particles with specific band gap properties (2.3 eV to 3.6 eV). When electric field strength exceeds 5 V/μm, the conductivity increases from 10^-16 S/m to 10^-2 S/m, automatically reducing electric field strength in high-stress regions.
2Reliability
If electrical conductivity of intermediate layer or encapsulation material is increased to reduce electric field strength, then component wear decreases, but material composition complexity increases
Solution Approach 1:
The intermediate layer or encapsulation material is formulated as a composite by embedding filler particles (such as metal oxides or semiconductor particles with specific band gaps) into the base material. This composite structure enables dynamic conductivity adjustment without fundamentally changing the material system, maintaining relative simplicity while achieving enhanced reliability.
Solution Approach 2:
Rather than using complex multi-layer structures, the invention achieves variable conductivity by changing the electrical parameter of the existing material through filler particle incorporation. The material transitions from insulating (10^-16 S/m) to conductive (10^-2 S/m) based on electric field strength, simplifying the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased conductivity reduces wear on device components, extends service life, prevents electrical discharges, and satisfies insulation standards, thereby enhancing the reliability and longevity of semiconductor devices.
Implementation Method 1
The filler particles comprise a semiconductor material with a band gap in a range from 2.3 eV to 3.6 eV. The filler particles are configured to increase at least one of an electrical conductivity of the intermediate layer or an electrical conductivity of the encapsulation material into a range from 10−16 S/m to 10−2 S/m upon an increase in an electric field strength to a value of more than 5 V/μm.
Data Source
AI summary
A semiconductor device contains a chip carrier and a semiconductor chip arranged on the chip carrier. Furthermore, the semiconductor device comprises an intermediate layer arranged between the chip carrier and the semiconductor chip, and an encapsulation material at least partially encapsulating the semiconductor chip. Filler particles are embedded in at least one of the interlayer or the encapsulation material, wherein the filler particles contain a semiconductor material with a band gap in a range from 2.3 eV to 3.6 eV.