Embedded Gate Resistor in Power Semiconductor Module
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Solution Overview
Problem
Conventional semiconductor power modules face challenges in reducing size and increasing manufacturing efficiency due to the use of thick-film resistors for gate series resistors, which also lead to increased surge voltage at the gate of the power semiconductor chip, causing potential damage and limiting high-density device implementation.
Innovation Solution
The integration of a gate series resistor with a predetermined electrical resistance value directly on the power semiconductor chip's insulation film, reducing inductance and parasitic capacitance, and allowing for enhanced surge voltage attenuation without increasing manufacturing complexity or cost.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick-film resistor is used as the gate series resistor on the hybrid integrated circuit, then the gate series resistor can provide surge protection, but the hybrid integrated circuit becomes large in size
Solution Approach 1:
The gate series resistor is integrated directly into the power semiconductor chip structure, merging the resistor function with the chip substrate. This eliminates the need for separate thick-film resistors on the hybrid integrated circuit, thereby reducing the overall circuit size while maintaining surge protection capability.
2Ease of manufacture
If the gate series resistor is connected through a bonding wire to the hybrid integrated circuit, then the resistor can be externally connected, but the inductance of the bonding wire increases the surge voltage at the gate
Solution Approach 1:
The gate series resistor is extracted from the external hybrid integrated circuit and relocated directly onto the power semiconductor chip. This removes the bonding wire connection, thereby eliminating the inductance that would otherwise increase surge voltage at the gate during surge events.
Solution Approach 2:
The power semiconductor chip substrate serves as an intermediary, providing a direct low-inductance path for the gate series resistor. This intermediary structure replaces the bonding wire connection, reducing the harmful inductive effects while maintaining electrical connectivity.
3Speed
If the gate series resistor is integrated on the power semiconductor chip, then the inductance is reduced and switching speed increases, but the manufacturing process becomes more complex
Solution Approach 1:
The gate series resistor is merged into the power semiconductor chip fabrication process, using the same semiconductor manufacturing techniques already employed for creating other chip components. This integration approach adds minimal complexity to the existing manufacturing process while achieving reduced inductance and improved switching speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces surge voltage impact on the gate, increases switching speed, and allows for compact module design without complicating the manufacturing process, while maintaining high voltage endurance and reducing the risk of internal insulation damage.
Implementation Method 1
a gate series resistor 8, which is provided with a predetermined electrical resistance value, integrated on an insulation film of the power semiconductor chip
Data Source
AI summary
A single semiconductor power module includes a power semiconductor chip including an embedded IGBT (the power semiconductor switching-device) and a control semiconductor chip. The power semiconductor chip also includes a gate series resistor integrated therein as a resistor through which the control semiconductor chip drives the power semiconductor chip. In such a configuration, a gate wire between the gate series resistor and a gate has a small lead inductance and a small parasitic capacitance with respect to the ground.