Embedded Heat Dissipation in Microelectronic Systems
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Solution Overview
Problem
Microelectronic systems face limitations in heat dissipation due to complex and costly manufacturing processes of embedded coin substrates, which often result in elevated local temperatures and reduced reliability, especially in high-power and high-frequency applications, as conventional solder materials have restrictive thermal conductivities and temperature tolerances.
Innovation Solution
The implementation of an embedded heat dissipation structure within microelectronic systems, utilizing a high thermal conductivity component bond layer formed by low-temperature sintering of metal particle-containing precursor materials, and optionally including a thermal conduit member, to enhance conductive heat flow and electrical interconnection, while maintaining high thermal tolerances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional solder materials are used to attach microelectronic components to embedded coin substrates, then electrical interconnection is achieved, but thermal conductivity and temperature tolerance are restricted
Solution Approach 1:
The patent changes the material parameters by replacing conventional solder materials with sintered metal materials that have superior thermal conductivity and temperature tolerance. This parameter change enables the system to operate at higher temperatures while improving heat dissipation efficiency.
Solution Approach 2:
The patent employs composite material structures combining sintered metal materials with embedded coin substrates. This composite approach creates a thermal management system that leverages the high thermal conductivity of sintered metals while maintaining the structural integrity of the substrate.
2Temperature
If embedded coin substrates are used to improve heat dissipation, then thermal performance is enhanced, but manufacturing complexity and cost increase
Solution Approach 1:
The patent merges the thermal management function with the substrate structure by integrating sintered metal materials directly into the substrate during manufacturing. This consolidation eliminates separate heat dissipation components and simplifies the overall manufacturing process.
Solution Approach 2:
The patent modifies manufacturing parameters by using low-temperature sintering processes that are compatible with standard PCB manufacturing workflows. This parameter adjustment reduces manufacturing complexity while maintaining effective heat dissipation.
3Power
If higher power levels and frequencies are operated to increase system capability, then performance is improved, but excess heat generation increases
Solution Approach 1:
The patent converts the harmful effect of excess heat generation into a beneficial thermal management opportunity by using sintered metal materials with high thermal conductivity. The heat generated by high-power operation is efficiently conducted away through the sintered metal pathways, transforming a problem into a manageable parameter.
4Productivity
If conventional manufacturing processes are used for embedded coin substrates, then production is maintained, but exposure to highly elevated processing temperatures causes substrate warpage
Solution Approach 1:
The patent changes the processing temperature parameter by implementing low-temperature sintering processes. This parameter modification maintains manufacturing productivity while preventing substrate warpage and other thermal damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces peak localized temperatures, enables operation at higher power levels and frequencies, and prevents premature fatigue of joints by providing enhanced thermal performance and reliability through efficient heat dissipation and robust electrical interconnection.
Implementation Method 1
low-temperature sintering of metal particle-containing precursor materials
Implementation Method 2
enhance conductive heat flow
Data Source
AI summary
Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.