Embedded IDT Acoustic Wave Assembly for Heat and Power Durability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing acoustic wave resonators face challenges with heat dissipation and mechanical ruggedness, particularly in high-frequency applications such as 5G NR, where thermal dissipation and power durability are critical, and conventional designs degrade resonant characteristics when bonded to support substrates.
Innovation Solution
A stacked acoustic wave device assembly with a solid acoustic mirror positioned between a piezoelectric layer and a support substrate, incorporating a laterally excited bulk acoustic wave resonator with a high thermal conductivity substrate, which confines acoustic energy and improves thermal dissipation while maintaining mechanical ruggedness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a laterally excited bulk acoustic wave resonator is used to achieve high frequency resonance, then the operating frequency is improved, but heat dissipation and mechanical ruggedness deteriorate
Solution Approach 1:
The patent transitions from a planar surface acoustic wave resonator to a three-dimensional bulk acoustic wave resonator structure. The IDT electrode is embedded within the piezoelectric layer rather than being disposed on the surface, creating a volumetric resonance structure that enables higher frequency operation while providing internal pathways for heat dissipation and improving mechanical stability through the stacked configuration with acoustic mirrors.
Solution Approach 2:
The patent introduces solid acoustic mirrors as intermediary structures between the piezoelectric layer and the support substrate. These acoustic mirrors serve as mediators that confine acoustic energy within the resonator, improve mechanical coupling, and provide thermal conduction pathways. The acoustic mirrors act as intermediate thermal management structures that address the heat dissipation issue while maintaining the high frequency resonance capability.
2Power
If transmit power is increased for 5G applications, then communication performance is improved, but heat generation and mechanical stress increase
Solution Approach 1:
The patent changes the physical and structural parameters of the resonator to accommodate higher power operation. The embedded IDT configuration within the piezoelectric layer, combined with the stacked acoustic mirror structure, creates multiple thermal conduction pathways and distributes heat generation throughout the volume rather than concentrating it on the surface. This parameter change enables the resonator to handle higher transmit powers required for 5G applications while maintaining effective heat dissipation.
3Reliability
If an embedded interdigital transducer electrode is used in the piezoelectric layer, then acoustic energy confinement is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the resonator structure into distinct functional layers: the piezoelectric layer containing the embedded IDT, the support substrate, and the solid acoustic mirrors. This segmentation allows each component to be optimized and potentially manufactured separately before assembly. The embedded IDT is formed within the piezoelectric layer through a controlled fabrication process, and the acoustic mirrors are positioned as discrete structures, making the overall manufacturing process more manageable despite the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances thermal dissipation and mechanical ruggedness, enabling high-frequency resonance with desirable power durability, suitable for filtering radio frequency signals in 5G NR and other high-frequency bands.
Implementation Method 1
A surface acoustic wave resonator can include an interdigital transductor electrode on a piezoelectric substrate. The surface acoustic wave resonator can generate a surface acoustic wave on a surface of the piezoelectric layer on which the interdigital transductor electrode is disposed.
Implementation Method 2
a first solid acoustic mirror disposed between the first substrate and the first piezoelectric layer
Data Source
AI summary
An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is embedded in the piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.