Embedded Inductor Semiconductor Package for Reliable Die Bonding
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Solution Overview
Problem
Integration of multiple semiconductor devices into a single package remains a challenge due to complexities in wafer-level packaging, particularly in achieving efficient electrical connections and reliable bonding between semiconductor dies.
Innovation Solution
The method involves hybrid bonding of semiconductor dies with inductor patterns and bonding metallurgies across dielectric layers, forming a conductive wire wrapping around dielectric material to create an inductor structure, which enhances electrical connectivity and reliability while reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer-level packaging is used to integrate multiple semiconductor devices, then productivity is improved, but device complexity increases making reliable bonding difficult
Solution Approach 1:
The patent divides the semiconductor wafer into multiple die units that can be independently processed and then bonded together. Each die unit is treated as a separate segment that undergoes individual preparation, bonding surface formation, and connection establishment, simplifying the overall packaging process while maintaining high integration efficiency
Solution Approach 2:
The patent transitions from traditional planar wafer-level packaging to a three-dimensional stacked architecture where die units are bonded in vertical layers. This dimensional change allows multiple devices to be integrated through vertical stacking with interconnection structures extending between layers, reducing lateral complexity while improving integration density
2Reliability
If bonding between semiconductor dies is achieved, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent performs preliminary preparation of bonding surfaces on each die unit before actual bonding, including forming bonding pads, applying bonding agents, and ensuring surface cleanliness. This preliminary action ensures that when bonding occurs, the surfaces are already optimized for reliable attachment, reducing the precision demands during the bonding process itself
Solution Approach 2:
The patent introduces bonding agents, adhesives, or intermediate layers between the semiconductor dies to facilitate reliable bonding. These intermediary materials compensate for minor misalignments and surface irregularities, enabling robust bonding while relaxing the manufacturing precision requirements for die alignment and surface flatness
3Ease of manufacture
If metallization layers are made thinner to reduce complexity, then ease of manufacture is improved, but electrical conductivity decreases
Solution Approach 1:
The patent employs composite metallization structures combining multiple materials with complementary properties. For example, copper cores providing high conductivity are covered with aluminum or tungsten layers for planarization and interconnection, creating a composite structure that achieves both thin profile/easy manufacturing and excellent electrical performance
Solution Approach 2:
The patent replaces traditional thick single-layer metallization with multi-layer composite structures where mechanical planarization (CMP) is applied to the top layer while the underlying conductive core maintains electrical performance. This substitution allows thin overall thickness for ease of manufacturing while preserving electrical conductivity through the composite architecture
Data Source
AI summary
A semiconductor package includes an inductor, a first die, and a second die bonded to the first die. The inductor includes first inductor patterns, second inductor patterns, and third inductor patterns, and the first inductor patterns and the second inductor patterns are made of different materials. The first inductor patterns and the second inductor patterns are embedded in the first die, and the second inductor patterns are embedded in the second die.