Embedded Interconnect Die Packaging for Overlay Shift Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The increasing size of interposers in Chip-on-wafer-on-substrate packages leads to narrower overlay windows, increasing the likelihood of cold joints and other manufacturing issues.

Innovation Solution

Embedding interconnect dies, such as local silicon interconnect (LSI) dies, within a package substrate, and forming through-vias directly from the substrate, which allows for smaller interposers and reduces overlay shift by distributing computing components more efficiently.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If interposers are made increasingly larger to meet computing power requirements, then computing power is improved, but overlay window becomes narrower and cold joints become more likely

Engineering Contradiction:
Improvecomputing powerVSAvoidoverlay window
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

The patent divides the monolithic interposer into multiple smaller interposer segments or dies. Each segment has its own size that maintains an adequate overlay window, while collectively they provide the large area needed for high computing power. This segmentation allows parallel processing and maintains manufacturing precision while achieving the required computing capacity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a two-dimensional planar interposer to a three-dimensional stacked architecture where multiple interposer layers are vertically arranged. This vertical stacking enables the system to achieve large effective area and high computing power without requiring each individual interposer layer to be large, thus maintaining adequate overlay windows for manufacturing precision.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Power

If interposers are made increasingly larger, then computing power is improved, but cold joints become more likely to occur

Engineering Contradiction:
Improvecomputing powerVSAvoidcold joint occurrence
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

By segmenting the large interposer into smaller units, the patent reduces the absolute size of each bonding interface. Smaller bonding areas are less prone to cold joints and manufacturing defects. The segmented structure also allows for better stress distribution and thermal management, further improving reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent incorporates preliminary underfill material application and encapsulation structures before final bonding. These preliminary actions prepare the bonding interfaces with appropriate stress relief and alignment features, reducing the likelihood of cold joints during the bonding process and improving overall joint reliability.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20250372497A1Semiconductor packages and the manufacturing processes thereof
Publication Date: 2025.12.04 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250372497A1 patent drawing
  • US20250372497A1 patent drawing
  • US20250372497A1 patent drawing

AI summary

A method includes forming a composite package substrate, which includes forming through-openings in a dielectric core, filling the through-openings to form a first plurality of through-vias in the dielectric core, and forming a first interconnect structure and a second interconnect structure on opposing sides of the dielectric core. The first interconnect structure is connected to the second interconnect structure through the first plurality of through-vias. The method further includes bonding a local interconnect die to the first interconnect structure, forming a second plurality of through-vias directly from the first interconnect structure, encapsulating the second plurality of through-vias and the local interconnect die in an encapsulant, and forming a third interconnect structure over and electrically coupling to the local interconnect die and the second plurality of through-vias.