Embedded I/O Channel Interposer for High-Bandwidth Signal Integrity

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Solution Overview

Problem

Current technologies face challenges in achieving high interconnection density and minimal loss I/O channels that preserve signal integrity at signaling frequencies above 1 GHz, particularly in improving memory-processor bandwidths by reducing signal attenuation, distortion, and crosstalk.

Innovation Solution

The design and construction of high interconnection density I/O channels with embedded passive networks, including ultra-low loss transmission lines and resonant gate transistors with broad band filtering stages, configured for Pre-Emphasis or Post-Emphasis modes, to optimize microprocessor-memory bandwidths, and the use of high energy density electroceramic dielectrics for amplification and equalization within semiconductor chip carriers or interposer circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the number of I/O channels and pitch density between I/O pins are increased, then memory bandwidth is improved, but signal distorting crosstalk increases

Engineering Contradiction:
Improvememory bandwidthVSAvoidsignal distorting crosstalk
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent introduces an interposer circuit as an intermediary component between the processor and memory chips. This interposer provides a controlled environment with standardized impedance control and signal routing, isolating the high-density I/O channels from each other to minimize crosstalk while maintaining high bandwidth capability through increased channel count and pitch density.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies different design optimizations to different regions of the I/O channel. Specifically, equalization circuitry is applied selectively at specific locations (transmitter or receiver end) to compensate for signal degradation, and impedance control is optimized locally at critical interfaces. This allows high density interconnects to achieve minimal crosstalk through localized quality enhancements rather than uniform design across the entire system.

Inventive Principle:
Principle #3Local quality

2Reliability

If equalizing circuitry with active components is used to correct signal distortions, then signal integrity is improved, but power consumption increases

Engineering Contradiction:
Improvesignal integrityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent implements equalization selectively rather than uniformly across all I/O channels. By applying equalization circuitry only where most needed (at specific ends of the link or on selected channels), the system achieves adequate signal integrity for high-speed operation while minimizing the total power consumption associated with active equalization components.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The patent employs adjustable equalization parameters that can be optimized for different operating conditions and channel characteristics. This allows the equalization circuitry to achieve effective signal correction with minimal power consumption by adapting its operation to the actual signal degradation levels rather than using fixed high-power settings on all channels.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If commodity materials are used for organic interconnects, then manufacturing cost is reduced, but signal distortion at high frequencies increases

Engineering Contradiction:
Improvemanufacturing costVSAvoidsignal distortion
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The interposer circuit serves as an intermediary that compensates for the limitations of commodity organic interconnect materials. By providing a controlled impedance environment and signal conditioning capabilities at the interposer level, the system can use cost-effective organic materials in the memory modules while maintaining high-frequency signal integrity through the mediating effect of the interposer's controlled design.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces insertion loss, enables high peak bandwidths exceeding 100 MBps, preferably exceeding 1 TBps, while maintaining signal integrity, and efficiently amplifies attenuated signals, thereby enhancing overall system performance and efficiency.

Implementation Method 1

a passive network filtering circuit comprising capacitive, inductive, and resistive elements embedded within the high peak bandwidth I/O channel

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

a passive network filtering circuit comprising capacitive, inductive, and resistive elements embedded within the high peak bandwidth I/O channel

Methodology Applied
Scientific EffectInductance: Inductor

Implementation Method 3

a passive network filtering circuit comprising capacitive, inductive, and resistive elements embedded within the high peak bandwidth I/O channel

Methodology Applied
Scientific EffectResistance: Electrical Resistance

Implementation Method 4

resonant gate transistor that amplifies attenuated signals within the high peak bandwidth I/O channel

Methodology Applied
Scientific EffectResonance: Resonance

Data Source

PatentUS11901956B2Module with high peak bandwidth I/O channels
Publication Date: 2024.02.13 DE ROCHEMONT L PIERRE
  • US11901956B2 patent drawing
  • US11901956B2 patent drawing
  • US11901956B2 patent drawing

AI summary

A high peak bandwidth I/O channel embedded within a multilayer surface interface that forms the bus circuitry electrically interfacing the output or input port on a first semiconductor die with the input or output port on a second semiconductor die.