Embedded Lumiphoric LED Structures for In-Chip Wavelength Conversion
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Solution Overview
Problem
Existing LED technologies face challenges in producing high-quality light with desired emission characteristics while maintaining high light emission efficiency, necessitating improved LED chips and packages that incorporate lumiphoric materials for effective wavelength conversion.
Innovation Solution
Incorporating lumiphoric materials within LED chips and wafers, arranged between reflective layers and active LED structures, with lumiphoric material layers comprising lumiphoric particles and binder layers, allowing for precise patterning and wavelength conversion of light before exiting the chip surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If lumiphoric materials are incorporated within LED chips for wavelength conversion, then light emission quality and color characteristics are improved, but device complexity increases
Solution Approach 1:
The patent embeds lumiphoric material layers directly within the LED chip structure between the active region and substrate, nesting the wavelength conversion function inside the light-emitting device itself rather than using separate external components. This integration improves light emission quality while managing device complexity through compact design.
Solution Approach 2:
The patent combines multiple functions into a single integrated structure: the lumiphoric material layer serves both as a wavelength conversion medium and as part of the overall light extraction pathway. By merging the wavelength conversion function with the LED chip structure, the patent achieves improved color characteristics while reducing the need for separate external conversion components.
2Productivity
If lumiphoric material layers are positioned between active LED structures and reflective layers, then wavelength conversion efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies lumiphoric materials to the LED chip structure before final packaging and assembly steps. By performing the lumiphoric material application early in the fabrication process, the patent ensures proper positioning for optimal wavelength conversion efficiency while simplifying subsequent manufacturing steps.
Solution Approach 2:
The patent positions lumiphoric material layers at specific locations within the LED chip structure where they can most effectively interact with the emitted light. This localized placement optimizes wavelength conversion efficiency at critical interfaces while managing manufacturing complexity through targeted rather than universal application.
3Adaptability or versatility
If multiple lumiphoric particles are arranged in patterns within binder layers, then emission spectrum broadening is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent varies parameters such as lumiphoric particle composition, size distribution, and spatial arrangement patterns to achieve different emission spectrum characteristics. By controlling these parameters during fabrication, the patent broadens the emission spectrum while managing manufacturing precision through established fabrication techniques.
Solution Approach 2:
The patent uses composite structures combining lumiphoric particles with binder materials to create patterned layers with tailored optical properties. This composite approach enables spectrum broadening through multiple lumiphoric materials while the binder provides structural integrity, reducing the precision requirements for particle placement compared to bare particle arrays.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light emission quality and efficiency by converting portions of light within the LED chip, resulting in broader emission spectra and improved brightness, suitable for various lighting applications.
Implementation Method 1
a lumiphoric material layer between the dielectric reflective layer and the active LED structure, the lumiphoric material layer configured for wavelength conversion of at least a portion of light generated by the active LED structure
Data Source
AI summary
Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly arrangements of lumiphoric materials within LEDs and related methods are disclosed. Lumiphoric materials are incorporated or otherwise embedded within LED chips and LED wafers. Embedded lumiphoric materials are provided so that at least some portions of light generated by active LED structures are subject to wavelength conversion before exiting LED chip surfaces. Lumiphoric material layers include arrangements of lumiphoric particles and binder layers positioned between reflective layers and active LED structures. Lumiphoric material layers and/or lumiphoric particles may be patterned within regions of LED chips and/or LED wafers. Related methods include depositing lumiphoric particles and binder layers before reflective layers in LED chips and LED wafers.