Embedded Microchannel Semiconductor Structure for Low Thermal Resistance
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Solution Overview
Problem
Existing methods for embedding microchannels in semiconductor devices face challenges such as high thermal resistance, complex fabrication processes, material mismatch issues, and interference with active components, leading to inefficient cooling and reliability concerns.
Innovation Solution
A method is developed to fabricate microchannels directly from the active side of the semiconductor substrate, using etching processes to create trenches that are sealed without bonding, allowing for close proximity to heat sources and enabling hermetic sealing, thus reducing thermal resistance and facilitating integration with other components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional liquid cooling approaches are used with packaged semiconductor dies mounted on PCBs, then cooling performance is improved compared to air cooling, but thermal resistance increases due to large distance and numerous thermal interfaces
Solution Approach 1:
The microchannels are nested directly within the semiconductor die structure itself, embedding the cooling channels inside the substrate. This eliminates the need for separate cooling units and reduces thermal interfaces by integrating the coolant flow path directly at the heat source location.
Solution Approach 2:
The invention transitions from conventional planar cooling interfaces to three-dimensional embedded microchannels within the substrate. This dimensional change allows coolant to flow in close proximity to heat-generating regions throughout the substrate volume, dramatically reducing thermal resistance.
2Reliability
If channels are directly embedded inside the semiconductor die using high aspect-ratio microchannels, then thermal resistance is reduced and cooling performance is improved, but fabrication complexity increases and reliability concerns arise
Solution Approach 1:
The invention merges the microchannel formation process with the existing semiconductor fabrication工艺流程. By using standard photolithography, etching, and deposition techniques already employed in semiconductor manufacturing, the complex task of creating embedded microchannels is integrated into the normal production flow, reducing overall fabrication complexity.
Solution Approach 2:
The invention uses parameter changes in the etching process, specifically controlling etch depth and selectivity, to create the microchannels. By adjusting etching parameters and using selective etchants, the microchannels are formed with precise dimensions and depths without requiring additional complex processing steps.
3Temperature
If microchannels are etched from the backside of the substrate, then cooling performance is improved, but active components on the front side are damaged or interfered with
Solution Approach 1:
The invention segments the substrate into distinct regions: the front side containing active components and the back side where microchannels are formed. By spatially separating the channel formation location from the active component location, the etching process can be performed on the back side without damaging or interfering with the front-side electronics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances cooling performance by minimizing thermal boundary resistances and enabling high heat flux management, while allowing for cost-effective integration of microfluidic applications without additional processing steps, thus improving device reliability and efficiency.
Implementation Method 1
forming at least one trench in the upper surface and through the upper layer using an etching process
Data Source
AI summary
The present invention relates to a method for fabricating an integrated electronic device with a microchannel, comprising the steps of: —Providing a homogeneous or heterogeneous substrate with one or more layers of material, respectively; —Forming at least one trench in the upper surface and through the upper layer using an etching process, particularly using a high aspect ratio etching process; —Sealing the trench by closing the opening of the trench on an upper surface of the upper layer.