Embedded MIM Capacitor Structure for 3D Stack Defect Detection
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Solution Overview
Problem
In 3D integrated circuits and semiconductor packaging, existing technologies face challenges in detecting defects such as passivation cracks, film delamination, and bump-induced damages, which can lead to reduced yield and increased manufacturing costs due to the inability to effectively identify and isolate faulty stacks during the assembly process.
Innovation Solution
The implementation of an embedded metal-isolator-metal (MIM) structure within semiconductor packages, which allows for electrical measurements during the stacking process, enabling the identification of known bad stacks and allowing only known good stacks to proceed, thereby reducing costs and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If electrical measurement structures are added to detect defects, then measurement precision improves, but device complexity increases
Solution Approach 1:
The MIM capacitor structure merges the defect detection function with the existing dielectric layer structure. The MIM capacitor is formed by integrating metal electrodes and dielectric materials into the semiconductor package interconnect structure, allowing electrical measurements to be performed without adding separate external sensing components. This combines the structural and sensing functions into a unified system.
Solution Approach 2:
The MIM capacitor structure serves multiple functions: it acts as both an electrical measurement sensor for defect detection and as part of the package interconnect structure. The same dielectric layers and metal electrodes that form the capacitor also provide structural support and electrical connectivity, eliminating the need for dedicated sensing components.
2Productivity
If electrical measurements are performed during stacking, then productivity improves through real-time defect identification, but device complexity increases due to additional measurement infrastructure
Solution Approach 1:
The MIM capacitor structure is formed during the semiconductor fabrication process before final packaging, preparing the measurement infrastructure in advance. This allows electrical measurements to be performed immediately during the stacking process without requiring additional setup or external measurement equipment, enabling real-time defect identification.
Solution Approach 2:
The semiconductor package structure itself provides the measurement capability through the embedded MIM capacitor. The dielectric layers and metal electrodes within the package interconnect structure serve as both structural components and sensing elements, allowing the device to self-diagnose defects during stacking without external intervention.
Data Source
AI summary
The present disclosure provides a semiconductor structure, including a capacitor. The capacitor includes a first electrode and a second electrode respectively electrically connected to a first conductor and a second conductor; and a first dielectric layer between the first electrode and the second electrode. In some embodiments, the first dielectric layer contacts with a sidewall surface of the first conductor. The semiconductor structure further includes a second dielectric layer over and adjacent to the capacitor. A method of forming the semiconductor package is also provided.