Embedded Multi-Die Interconnect Bridge With Through-Mold Vias

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Solution Overview

Problem

Conventional IC package manufacturing processes are not scalable to finer bump pitches due to increased via taper, making embedded multi-die interconnect bridges (EMIBs) susceptible to damage and warpage, which results in non-functional IC packages.

Innovation Solution

The implementation of a microelectronic component with a substrate having a conductive pathway and a mold material region that includes through-mold vias (TMVs) electrically coupled to the conductive pathway, providing mechanical support and reducing the likelihood of damage, allowing for higher aspect ratio components and denser interconnects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional manufacturing processes are used for IC packages, then the manufacturing process is simple and well-established, but the process is not scalable to finer bump pitch due to increased via taper

Engineering Contradiction:

Improvebump pitch precisionVSAvoidmanufacturing process complexity

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The interconnect bridge is divided into multiple segments with different materials and properties. The bridge includes a first portion with a first material and a second portion with a second material, allowing each segment to be optimized for specific functions such as mechanical support, electrical conduction, and stress management, thereby enabling finer bump pitch manufacturing

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The interconnect bridge utilizes composite material construction with at least two different materials having different properties. This composite structure allows the bridge to simultaneously achieve mechanical strength, electrical conductivity, and dimensional stability required for high-precision fine-pitch interconnections

Inventive Principle:

Principle #40Composite materials

2Reliability

If EMIBs are embedded in IC packages, then interconnect functionality is achieved, but the EMIBs are susceptible to damage and warpage during operation

Engineering Contradiction:

ImproveEMIB structural integrityVSAvoidEMIB susceptibility to damage and warpage

Core Design Contradiction:

ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent modifies physical parameters of the interconnect bridge including material composition, cross-sectional geometry, and thermal expansion characteristics. These parameter changes enable the bridge to maintain structural integrity and resist damage and warpage during IC package operation while preserving interconnect functionality

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS11688692B2Embedded multi-die interconnect bridge having a substrate with conductive pathways and a molded material region with through-mold vias

Publication Date: 2023.06.27 INTEL CORP

AI summary

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.