Embedded Multi-Die Interconnect Bridge Using 2DEG
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Solution Overview
Problem
The existing interconnections between dies in electronic packages, typically using metallic conductors like copper, face challenges with signal transmission speed due to electron scattering, which reduces the speed and integrity of signal transmission, and increasing power consumption when trying to enhance speed.
Innovation Solution
The implementation of a high electron mobility channel, such as a two-dimensional electron gas (2DEG) in an interconnect bridge, which uses a heterojunction between materials with different lattice parameters to create a ballistic conduction channel, reducing scattering and enhancing signal transmission speed without increasing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If metallic conductors (copper traces or wires) are used for interconnections between dies, then electrical signal transmission can be achieved, but electron scatter occurs which reduces transmission speed and signal integrity
Solution Approach 1:
The patent changes the fundamental conduction mechanism from diffusive (metallic) to ballistic (semiconductor). By using a semiconductor bar with high electron mobility and ballistic transport, the patent achieves both high speed and maintained signal integrity, resolving the contradiction between transmission speed and signal integrity that plagues metallic conductor systems
Solution Approach 2:
The patent substitutes metallic conductors with semiconductor-based ballistic transport channels. This replacement fundamentally changes the electron transport mechanism from scattering-dominated (metallic) to ballistic (semiconductor), simultaneously improving speed and maintaining signal integrity without the trade-offs inherent in metallic systems
2Use of energy by moving object
If the size of metallic conductors is increased to improve conductivity, then electrical conductivity improves, but the package size increases
Solution Approach 1:
The patent changes the conduction mechanism from diffusive to ballistic transport. Ballistic transport in semiconductors achieves high conductivity without requiring large cross-sectional areas, as electrons traverse the conductor without scattering. This resolves the contradiction by achieving high conductivity through mechanism change rather than size increase
Solution Approach 2:
The patent employs a composite structure combining semiconductor materials with high electron mobility. This composite approach enables ballistic transport through carefully engineered semiconductor layers, achieving superior conductivity in a compact form factor compared to traditional metallic conductors
3Speed
If signal power is increased to overcome electron scatter and improve transmission speed, then transmission speed improves, but power consumption increases
Solution Approach 1:
The patent substitutes metallic diffusive conduction with semiconductor ballistic transport. This substitution eliminates the need for high power to overcome scattering losses, as ballistic transport inherently minimizes energy dissipation. The result is high-speed transmission achieved without the power consumption penalty that would otherwise be required in metallic systems
4Volume of moving object
If the cross-sectional area of conductors is decreased to reduce package size, then package size reduces, but electron scatter increases reducing conductivity
Solution Approach 1:
The patent changes the transport mechanism to ballistic conduction in semiconductors. This change enables high conductivity even in narrow conductors, as ballistic transport is not limited by side wall scattering in the same way diffusive transport is. The patent achieves compact dimensions without sacrificing conductivity through this fundamental mechanism change
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly increases the speed of signal transmission between dies while maintaining low power consumption, addressing the limitations of traditional metallic conductors by utilizing a ballistic conduction channel that minimizes scattering and optimizes signal integrity.
Implementation Method 1
uses a heterojunction between materials with different lattice parameters to create a ballistic conduction channel, reducing scattering and enhancing signal transmission speed
Implementation Method 2
The interconnect bridge includes a two-dimensional electron gas (2DEG) located between the first layer and the second layer
Data Source
AI summary
The present disclosure relates to devices and techniques for an interconnect bridge to communicatively couple two or more dies. In an example, the interconnect bridge can include a base element having a first material. A first layer, including a second material, can be attached to the base element. A second layer, including a third material, can be disposed on the first layer. A two-dimensional electron gas (2DEG) can be located between the first layer and the second layer. A first contact, adapted to electrically couple to the first die, can be disposed in a first side of the 2DEG. A second contact, adapted to electrically couple to the second die, can be disposed in a second side of the 2DEG. Accordingly, the first die can be electrically coupled to the second die through the 2DEG.