Embedded Passive Component Layout for Compact Semiconductor Cooling

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Solution Overview

Problem

Existing semiconductor arrangements face challenges in reducing installation space and ensuring efficient cooling, particularly with increasing miniaturization.

Innovation Solution

The passive component is integrated into a cutout of the first metallization, directly bearing on the dielectric material layer, allowing for improved thermal connection and reduced installation space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If passive components are soldered onto the substrate surface, then electrical connections are established, but installation space increases and thermal connection is insufficient

Engineering Contradiction:
Improveinstallation spaceVSAvoidcooling efficiency
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent merges the passive component with the substrate metallization layer by creating a cutout in the first metallization that receives the passive component. This integration eliminates the need for separate soldering processes and reduces installation space while improving thermal connection, as the passive component is directly embedded in the thermally conductive metallization structure.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions from a two-dimensional surface mounting approach to a three-dimensional embedded structure by creating cutouts in the metallization layer. This allows passive components to be positioned within the substrate structure rather than on its surface, reducing the overall footprint and enabling better thermal management through direct contact with thermally conductive paths.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Measurement precision

If passive components are arranged in current-carrying paths for accurate measurement, then measurement precision improves, but stress on components increases

Engineering Contradiction:
Improvecurrent detection accuracyVSAvoidservice life
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent applies local quality by creating specific cutout regions in the metallization layer that are optimized for passive component placement. These localized structures provide both the electrical connection needed for accurate current measurement and the mechanical support necessary to reduce stress on the components, allowing precise measurement without compromising reliability.

Inventive Principle:
Principle #3Local quality

3Volume of moving object

If miniaturization is increased to reduce installation space, then device size decreases, but thermal management becomes more difficult

Engineering Contradiction:
Improvedevice sizeVSAvoidthermal management
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent combines the electrical function of the metallization layer with the thermal management function by embedding passive components directly in the metallization cutouts. This integration ensures that heat generated by passive components is immediately conducted away through the thermally conductive metallization structure, enabling effective thermal management in miniaturized devices.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This integration enables efficient cooling and simplifies the production process while saving installation space, facilitating closer positioning of other components and enhancing service life through stress reduction.

Implementation Method 1

The passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer... enabling efficient cooling

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12482739B2Arrangement for a semiconductor arrangement comprising at least one passive component and a substrate
Publication Date: 2025.11.25 SIEMENS AG
  • US12482739B2 patent drawing
  • US12482739B2 patent drawing
  • US12482739B2 patent drawing

AI summary

An arrangement for a semiconductor arrangement includes a substrate including a dielectric material layer and a first metallization arranged on the dielectric material layer. A passive component is arranged completely in a cutout of the first metallization and bears directly on the dielectric material layer. The passive component is designed to include a first profile. The the first metallization includes a second profile in a region of contacting with the passive component, with the first and second profiles engaging with one another.