Embedded Passive Element Semiconductor Device
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Solution Overview
Problem
The existing semiconductor device with a package on package (POP) structure faces challenges in miniaturization due to the thickness of passive elements, which increases the gap between facing surfaces, requiring larger solder balls and wider electrode pads, making it difficult to reduce the overall thickness and width of the device.
Innovation Solution
The semiconductor device incorporates a structure with a first insulating layer, a wiring layer, a semiconductor chip, and passive elements where the passive element is partially embedded and partially protruding, with the insulating layers electrically connecting the passive element's electrode to the wiring layer, allowing for a reduced gap between devices and thinner profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If passive elements are mounted on the surface of the semiconductor device, then electrical connections are established, but the thickness of the device increases due to the gap between facing surfaces
Solution Approach 1:
The passive element is embedded within the insulating layers, with its electrode nested inside the insulating structure rather than protruding outward. This nesting approach allows the electrode to be positioned at a specific depth within the insulating layer, reducing the overall device thickness while maintaining electrical connection functionality.
Solution Approach 2:
The passive element is positioned in the thickness direction (vertical dimension) rather than only in the horizontal plane. By controlling the protruding amount of the passive element to be less than the gap between facing surfaces, the design transitions from a surface-mounted approach to a partially embedded approach, effectively utilizing the vertical dimension to reduce overall device footprint.
2Ease of manufacture
If the gap between facing surfaces is increased to accommodate passive elements, then passive elements can be mounted, but the device width and electrode pad size must increase
Solution Approach 1:
The design moves the passive element from a surface-mounted position to a partially embedded position within the insulating layer. This vertical repositioning allows the passive element to be accommodated within the existing device footprint without increasing device width or requiring larger electrode pads, as the passive element utilizes the thickness dimension rather than expanding the horizontal area.
3Reliability
If solder ball diameter is increased to bridge the gap between devices, then reliable joining is achieved, but the device becomes larger
Solution Approach 1:
The design changes the critical parameter from gap distance to embedded depth. By controlling the protruding amount of the passive element to be less than the gap between facing surfaces, the effective gap that needs to be bridged by solder balls is reduced. This parameter change allows for smaller solder ball diameters while maintaining reliable joining, thereby reducing overall device dimensions.
Data Source
AI summary
A semiconductor device includes a first insulating layer; a wiring layer formed on a first surface of the first insulating layer and including a first electrode pad; a semiconductor chip; a second insulating layer including a semiconductor chip accommodating portion; a third insulating layer on the second insulating layer; and a passive element including an electrode and formed of an embedded portion and a protruding portion on a second surface of the first insulating layer, wherein an end surface of the embedded portion is coated by the insulating layer, the electrode of the passive element is electrically connected to the wiring layer through a via wiring formed in the insulating layers, the first electrode pad is electrically connected to another semiconductor device through a joining portion, and a protruding amount of the protruding portion is less than a gap between the second surface and the another semiconductor device.