Embedded Power Gate Layout for Lower IR Drop in ICs

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Solution Overview

Problem

Existing power gating schemes in integrated circuit devices face challenges in ensuring predictable voltage drops due to uncertainties in local power dissipation, leading to inefficiencies in current distribution and increased robustness of die layers.

Innovation Solution

The use of embedded power gates (EPGs) clustered into stripes on on-die metal layers, allowing for current self-reistribution and reduced IR drops, enabling more even current dissipation without relying on package layers, and enabling independent enable/disable of functional circuit groups with finer granularity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing power gating schemes are used, then power delivery is provided, but unpredictable voltage drops occur due to uncertainties in local power dissipation

Engineering Contradiction:
Improvepredictability of voltage dropsVSAvoidinefficiencies in current distribution
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The power delivery network is segmented into multiple embedded power gates distributed across the die, with each power gate serving a specific local region. This segmentation allows independent control and prediction of voltage drops in each segment, eliminating the unpredictability caused by centralized power gating while improving current distribution efficiency.

Inventive Principle:
Principle #1Segmentation

2Reliability

If robust die layers are used, then power delivery stability is improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvepower delivery stabilityVSAvoidrobustness of die layers
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Instead of making all die layers uniformly robust, the invention implements embedded power gates with specific local characteristics at strategic locations. Each power gate is designed with tailored transistor sizes and threshold voltages suited to its local power dissipation requirements, achieving overall power delivery stability without requiring universally robust die layers, thus reducing device complexity.

Inventive Principle:
Principle #3Local quality

3Loss of energy

If package layers are used for power gating, then power delivery is achieved, but leakage power reduction is limited

Engineering Contradiction:
Improveleakage powerVSAvoiddistance from power gate to circuitry
Core Design Contradiction:
Loss of energyVSLength of stationary object

Solution Approach 1:

The invention transitions from using package layers (external to the die) to embedding power gates directly within on-die metal layers. This dimensional change places power gates in the same plane as the circuitry they serve, dramatically reducing the distance between power gates and load circuits. The shorter distance enables more effective leakage power reduction while maintaining efficient power delivery.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Productivity

If finer power management granularity is implemented, then power efficiency improves, but current distribution challenges increase

Engineering Contradiction:
Improvepower management granularityVSAvoidcurrent distribution efficiency
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The embedded power gate structure enables local feedback mechanisms where each power gate can sense and respond to its local power dissipation conditions. This feedback capability allows finer power management granularity while maintaining efficient current distribution, as each power gate adjusts its operation based on real-time local conditions rather than relying on centralized control that struggles with granular power management.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces leakage power and allows for lower robust die layers by providing high current through embedded power gates, achieving more predictable and efficient power delivery with lower voltage drops across the power gate.

Implementation Method 1

Power gating involves intercepting the voltage supply network from functional circuitry

Methodology Applied
Scientific EffectPower gating: Electrical Resistance

Implementation Method 2

The distribution of the gated power is done using on-die metal layers without having to come back out and use package layers, as has typically been done. This allows for lower IR drops, and more evenly distributed current dissipation

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

This allows for lower IR drops

Methodology Applied
Scientific EffectOhm's law: Ohm's Law

Data Source

PatentUS20090085607A1Embedded power gating
Publication Date: 2009.04.02 TAHOE RES LTD
  • US20090085607A1 patent drawing
  • US20090085607A1 patent drawing
  • US20090085607A1 patent drawing

AI summary

With embodiments disclosed herein, the distribution of gated power is done using on-die layers without having to come back out and use package layers.