Embedded MOSFET Power Module Packaging for Low Inductance Cooling

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Solution Overview

Problem

Traditional power module packaging struggles with high parasitic inductance and limited heat dissipation, particularly in high-frequency and high-temperature applications, leading to issues like overvoltage, parasitic oscillation, and reduced reliability.

Innovation Solution

A package structure with a multi-layer plate-like design featuring a top and bottom insulation layer, metal pattern layers, solder connections, and embedded MOSFET bare dies with metal connection blocks, eliminating bonding wires and utilizing blind vias and metal plating for efficient heat dissipation and reduced parasitic inductance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional substrate and bonding wire packaging is used, then electrical interconnection is achieved, but parasitic inductance increases

Engineering Contradiction:
Improvepower module reliabilityVSAvoidparasitic inductance
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent removes bonding wires from the package structure entirely, replacing them with direct metal-to-metal connections through the DBC substrate. This extraction of the bonding wire component eliminates the primary source of parasitic inductance while maintaining electrical interconnection functionality through alternative pathways.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent transitions from planar electrical connections to three-dimensional vertical connections by routing current through the thickness of the DBC substrate. This dimensional change allows current to flow directly from top to bottom surfaces, significantly reducing the loop area and associated parasitic inductance compared to traditional bonding wire paths.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If single heat dissipation path through bottom is used, then thermal management is simplified, but heat dissipation efficiency decreases

Engineering Contradiction:
Improveheat dissipation structure complexityVSAvoidheat dissipation efficiency
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent divides the heat dissipation function into two independent pathways: one through the bottom of the DBC substrate and another through the top surface. This segmentation allows heat to be dissipated simultaneously in multiple directions, effectively doubling the heat dissipation capacity while maintaining relatively simple structural design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The DBC substrate is designed to serve dual functions: electrical insulation and heat dissipation. By making the substrate itself thermally conductive and providing heat dissipation paths through both surfaces, the substrate becomes a multi-functional component that simultaneously manages electricity and heat, eliminating the need for separate heat sinking structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Object-affected harmful factors

If DBC+PCB hybrid packaging or three-dimensional packaging is used, then parasitic inductance is reduced, but structure complexity and cost increase

Engineering Contradiction:
Improveparasitic inductanceVSAvoidpackage structure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent merges the electrical connection function and heat dissipation function into a single integrated DBC substrate structure. By combining these functions and eliminating separate components like bonding wires and complex interconnection layers, the design achieves low parasitic inductance while maintaining simple overall structure and reduced manufacturing cost.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

Instead of adding complex interconnection structures to reduce parasitic inductance, the patent inverts the approach by removing traditional high-inductance bonding wires and relying on direct metal-to-metal connections through the substrate. This inversion simplifies the structure while achieving the desired low parasitic inductance performance.

Inventive Principle:
Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces packaging volume and weight, minimizes parasitic inductance, enhances switching speed, and enables double-sided heat dissipation, improving power density and reliability for high-power, high-frequency, and high-temperature environments.

Implementation Method 1

The bottom of the power bare die is connected to the direct bonding copper (DBC) substrate through solder

Methodology Applied
Scientific EffectSoldering: Soldering

Implementation Method 2

A metal plating layer is provided on the inner wall of each blind via

Methodology Applied
Scientific EffectElectroplating: Electroplating

Implementation Method 3

the heat generated by the power devices can only be dissipated through the bottom of the package

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230290756A1Package structure of embedded power module with low parasitic inductance and high heat dissipation efficiency
Publication Date: 2023.09.14 ZHEJIANG UNIV
  • US20230290756A1 patent drawing

AI summary

A package structure of an embedded power module includes a top insulation layer, a top metal pattern layer, a solder layer, a device layer, a bottom metal pattern layer and a bottom insulation layer sequentially arranged from top to bottom. The device layer includes at least two MOSFET bare dies and several metal connection blocks, and is filled with insulation filler to isolate the MOSFET bare dies and the metal connection blocks from each other. The drain electrodes of the bare dies are connected with the top metal pattern layer through the solder layer, and the source electrodes and the gate electrodes of the bare dies are electrically connected to the bottom metal pattern layer, respectively. The upper and lower surfaces of the metal connection blocks are electrically connected to the top metal pattern layer and the bottom metal pattern layer, respectively.