Embedded Power Semiconductor Module for Low-Inductance Switching
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Solution Overview
Problem
Conventional power modules face issues with high parasitic inductance, reduced switching efficiency, and limited power density due to wire-bonded connections between high-voltage and low-voltage switching elements, which also restrict heat dissipation and hinder component replacement.
Innovation Solution
The semiconductor switches and diodes are embedded within insulation layers, forming sub-modules that are directly connected to the substrate, reducing parasitic inductance and impedance, enhancing switching efficiency, and allowing for increased power density and easier component replacement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire-bonded technology is used to connect high-voltage-side switching elements and low-voltage-side switching elements, then the connection is established, but parasitic inductance increases and switching efficiency decreases
Solution Approach 1:
The patent extracts and eliminates the wire-bonding structure from the conventional power module design. By directly mounting semiconductor chips on the substrate without wire bonds, the harmful parasitic inductance is removed while maintaining reliable electrical connections through direct chip-substrate contact.
Solution Approach 2:
The patent replaces the mechanical wire-bonding system with a direct mechanical mounting system where semiconductor chips are directly attached to the substrate. This substitution eliminates the intermediate wire connection that causes parasitic inductance, achieving both reliable connection and improved switching efficiency.
2Reliability
If wire-bonded connections are used, then electrical connection is achieved, but power density is limited due to occupied space
Solution Approach 1:
The patent removes the wire-bonding structure that occupies valuable substrate space. By eliminating wires and their required bonding areas, more space becomes available for power components, thereby increasing the overall power density of the module.
3Reliability
If wire-bonded area is retained on substrate, then connection is possible, but space utilization is limited
Solution Approach 1:
The patent extracts and eliminates the wire-bonding area from the substrate surface. By removing the need for wire bonding zones, the entire substrate area becomes available for mounting power components, maximizing space utilization.
4Ease of manufacture
If conventional packaging is used after mounting on substrate, then module is complete, but component replacement is impossible if malfunction occurs
Solution Approach 1:
The patent segments the power module into independent, replaceable semiconductor chip units mounted on the substrate. Each chip can be individually removed and replaced without affecting other components or requiring complete module repackaging, enabling easy repair and maintenance.
Data Source
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AI summary
A power module (1, 10, 11, 12) includes a substrate (2), a first sub-module (3, 6, 8) and a second sub-module (4, 7, 9). The substrate (2) includes plural first conducting parts (20), plural second conducting parts (21) and a third conducting part (22). The first sub-module (3, 6, 8) is disposed on the substrate (2), and includes a first semiconductor switch (30), a first diode (31), a first electrode (320), a second electrode (321) and a third electrode (322). The first electrode (320) and the second electrode (321) are electrically connected with the corresponding first conducting parts (20). The third electrode (322) is electrically connected with the third conducting part (22). The second sub-module (4, 7, 9) is disposed on the substrate (2), and includes a second semiconductor switch (40), a second diode (41), a fourth electrode (420), a fifth electrode (421) and a sixth electrode (422). The fourth electrode (420) and the fifth electrode (421) are electrically connected with the corresponding second conducting parts (21). The sixth electrode (422) is electrically connected with the third conducting part (22).