Embedded Protective Film in Stacked Semiconductor Electrodes

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Solution Overview

Problem

In stacked semiconductor devices, abnormal electrode shapes can lead to defects in the joining process between substrates, affecting the reliability of the semiconductor device due to thermal expansion issues during heat treatment.

Innovation Solution

A semiconductor device with an electrode junction structure where a protective film is embedded inside the electrically-conductive material, forming a space that absorbs thermal expansion, preventing the electrodes from projecting and reducing the risk of substrate peeling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If electrodes are joined in direct contact through heat treatment to achieve electrical connection between substrates, then electrical connectivity is established, but thermal expansion causes electrode shape abnormalities and joining defects

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidelectrode shape precision
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

A protective film is formed on the electrode surface before heat treatment to prevent thermal expansion damage. This film acts as a cushioning layer that absorbs expansion stress during the joining process, preventing electrode shape abnormalities and ensuring reliable electrical connections without compromising manufacturing precision

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The protective film serves as an intermediary substance between the electrodes during heat treatment. It mediates the thermal expansion process by providing a barrier that prevents direct contact and adhesion of expanding electrode materials, thereby maintaining electrode shape precision while still allowing electrical connection to be established

Inventive Principle:
Principle #24Intermediary (Mediator)

2Stability of the object's composition

If protective film is embedded inside electrically-conductive material to prevent diffusion, then electrode stability is improved, but device structure becomes more complex

Engineering Contradiction:
Improveelectrode composition stabilityVSAvoidelectrode structure complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The protective film is embedded within the electrically-conductive material in a nested configuration. This nested structure allows the protective film to be integrated inside the electrode without significantly increasing external dimensions or overall device complexity, while effectively preventing material diffusion and improving electrode composition stability

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the reliability of the semiconductor device by stabilizing the electrode junction and reducing the risk of substrate peeling, ensuring stable electrical connections between stacked substrates.

Implementation Method 1

a protective film for prevention of diffusion of an electrically-conductive material constituting the electrode and the via is embedded inside the electrically-conductive material

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 2

a structure in which a protective film for prevention of diffusion of an electrically-conductive material constituting the electrode and the via is embedded inside the electrically-conductive material

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11127773B2Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
Publication Date: 2021.09.21 SONY SEMICON SOLUTIONS CORP
  • US11127773B2 patent drawing
  • US11127773B2 patent drawing
  • US11127773B2 patent drawing

AI summary

Provided is a semiconductor device including a plurality of substrates that is stacked, each of the substrates including a semiconductor substrate and a multi-layered wiring layer on the semiconductor substrate, the semiconductor substrate having a circuit with a predetermined function formed thereon. Bonding surfaces between at least two substrates among the plurality of substrates have an electrode junction structure in which electrodes on the respective bonding surfaces are in direct contact with each other. The electrode junction structure is for electrical connection between the two substrates. In at least one of the two substrates, at least one of the electrode constituting the electrode junction structure or a via for connection of the electrode to a wiring line in the multi-layered wiring layer has a structure in which a protective film for prevention of diffusion of an electrically-conductive material constituting the electrode and the via is inside the electrically-conductive material.