Embedded Resistor Pass-Through Structure for SiC MOSFET Packaging
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Solution Overview
Problem
Existing electronics packaging techniques for power semiconductor switches, such as SiC MOSFETs, require individual pick and place operations for external gate resistors and shims, leading to increased fabrication time, yield issues, and costs due to the lack of integration of resistors within the device.
Innovation Solution
An electronics package with a prefabricated pass-through structure that integrates multiple conductive through-hole structures and resistors, allowing for a single pick and place operation and enabling pre-testing before integration, which simplifies the manufacturing process and reduces costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If individual pick and place operations are used for external gate resistors and shims, then each component can be precisely positioned, but fabrication time increases and manufacturing complexity increases
Solution Approach 1:
The patent combines multiple discrete components (gate resistors and shims) into a single integrated embedded structure that is placed as one unit. This merging approach maintains positioning precision while dramatically reducing the number of pick and place operations required, thereby increasing productivity and reducing fabrication time.
Solution Approach 2:
The gate resistors and shims are pre-assembled into an integrated structure before the pick and place operation. This preliminary assembly allows multiple components to be positioned in a single operation rather than requiring separate positioning steps for each component, thus improving both precision and productivity.
2Ease of operation
If individual pick and place operations are used for external gate resistors and shims, then each component can be independently placed, but manufacturing cost increases
Solution Approach 1:
By merging multiple components into a single integrated structure, the patent reduces the total number of pick and place operations required. This decreases manufacturing complexity and cost while maintaining the functional independence of each component within the integrated structure.
3Reliability
If discrete shims are used for vertical electrical connections, then electrical connectivity can be established, but the number of components and manufacturing steps increases
Solution Approach 1:
The patent integrates the shim functionality directly into the embedded structure that also contains the gate resistors. This merging eliminates the need for separate discrete shims while maintaining reliable electrical connectivity, thereby reducing device complexity and the number of components.
Solution Approach 2:
The embedded structure serves multiple functions simultaneously: it provides vertical electrical connections (shim function), includes gate resistors for switching control, and acts as a integrated mounting structure. This multi-functionality reduces the number of separate components needed while maintaining all necessary electrical connectivity functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces manufacturing time and costs by allowing multiple connections to be made in a single step, improves package yield through pre-testing, and enhances the integration of power semiconductor devices with embedded resistors, addressing the inefficiencies of discrete shim placement.
Implementation Method 1
at least one through-hole structure forming at least one conductive pathway through a thickness of the insulating core
Implementation Method 2
a resistor disposed proximate a top surface of the insulating core
Data Source
AI summary
An electronics package includes an insulating substrate, a semiconductor device having a top surface coupled to a first side of the insulating substrate, and a pass-through structure coupled to the first side of the insulating substrate. The pass-through structure includes an insulating core, a resistor disposed proximate a top surface of the insulating core, and at least one through-hole structure forming at least one conductive pathway through a thickness of the insulating core. A patterned metallization layer is formed on a second side of the insulating substrate. The patterned metallization layer is electrically coupled to at least one first conductive pad of the semiconductor device and electrically couples at least one second conductive pad of the semiconductor device to a through-hole structure of the at least one through-hole structure through the resistor.