Embedded RF Mesh Electrostatic Chuck Layout for Arc Reduction
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in reducing arcing and improving film quality at the periphery of substrates during plasma-enhanced chemical-vapor deposition (PECVD) processes, primarily due to electrostatic chucking and vertical electric field orientations.
Innovation Solution
The implementation of internal meshes with a reduced outer diameter, embedded in the pedestal of a semiconductor processing chamber, which deliver radio-frequency (RF) power to the plasma, creating a horizontal component of the electric field that directs ions towards the substrate periphery. Additionally, variable capacitors are used to adjust the RF power distribution, optimizing film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrostatic chucking devices are used to hold substrates during PECVD processes, then substrate positioning and film formation are enabled, but arcing occurs at the periphery of the substrate
Solution Approach 1:
The patent extracts the RF mesh from the traditional external position and embeds it within the pedestal structure. This internal mesh configuration removes the mesh from the harmful electric field environment at the periphery, eliminating the arcing issue while maintaining the necessary electrostatic chucking function for substrate positioning
Solution Approach 2:
The patent introduces an intermediary RF mesh structure embedded in the pedestal that mediates between the plasma and the substrate. This internal mesh acts as a controlled interface that delivers RF power to the plasma without creating the uncontrolled arcing that occurs with external meshes, thus resolving the contradiction between enabling film formation and preventing harmful arcing
2Manufacturing precision
If vertical electric field orientation is used during film deposition, then film formation on substrate surface is achieved, but film quality at periphery deteriorates with cracking
Solution Approach 1:
The patent applies local quality by creating a non-uniform electric field through the internal RF mesh configuration. The mesh generates a horizontal electric field component specifically at the periphery region, which directs ions toward the edge areas to reinforce film formation and eliminate cracking, while maintaining vertical field orientation for overall film deposition
3Power
If RF power is delivered to plasma through external meshes, then plasma generation and film deposition are enabled, but arcing increases at mesh locations
Solution Approach 1:
The patent implements the nested doll principle by placing the RF mesh inside the pedestal structure, nesting it within the chamber architecture. This internal positioning allows RF power to be delivered to the plasma through the mesh while the mesh is protected from direct exposure to the harmful electric field concentrations that cause arcing, thus enabling power delivery without the harmful effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces arcing and improves film quality at the substrate periphery by ensuring that ions, rather than radicals, primarily form the film, resulting in a denser and more durable film with reduced cracking.
Implementation Method 1
one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber
Implementation Method 2
The RF power may cause an electric field comprising a horizontal component that directs ions from the plasma to a periphery of the substrate
Implementation Method 3
forming a plasma from the precursor in the semiconductor processing chamber. The method may further include delivering radio-frequency (RF) power to plasma through one or more internal meshes
Implementation Method 4
The RF power may cause an electric field comprising a horizontal component that directs ions from the plasma to a periphery of the substrate when forming the film
Implementation Method 5
one or more variable capacitors coupled between the RF source and the one or more internal meshes. Adjusting a capacitance of the one or more variable capacitors may adjust an amount of the RF power that is provided to the one or more internal meshes
Data Source
AI summary
A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.