Embedded Scattering Bar for Photolithography Mask Correction
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Solution Overview
Problem
In integrated circuit manufacturing, the reduction in critical dimension (CD) leads to distortions during photolithography, necessitating optical proximity correction (OPC) which is hindered by the placement of scattering bars on the mask, causing deposition loss and prolonging correction time.
Innovation Solution
A mask correction method where a scattering bar is embedded in the substrate of a photolithography plate, determined by optical imaging simulation to avoid interference with the mask pattern, reducing deposition loss and shortening correction time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a scattering bar is disposed on the mask surface, then optical proximity correction can be implemented, but the scattering bar interferes with mask pattern processing causing deposition loss and mask scrapping
Solution Approach 1:
The scattering bar is moved from the mask surface (2D plane) to the substrate interior (3D space), changing its spatial dimension. This allows the scattering bar to remain present for optical correction while no longer interfering with mask pattern processing, thus eliminating deposition loss while maintaining correction functionality
Solution Approach 2:
The scattering bar is extracted from the mask structure and relocated to the substrate. This separation removes the harmful interaction between the scattering bar and mask pattern processing, allowing the mask to be processed without deposition loss while the scattering bar remains in place for optical proximity correction
2Manufacturing precision
If a scattering bar is disposed on the mask surface, then optical proximity correction can be implemented, but the correction time is prolonged
Solution Approach 1:
The scattering bar is pre-embedded in the substrate before mask processing begins. This preliminary action eliminates the need for time-consuming mask scrapping and reprocessing, allowing optical proximity correction to be implemented directly without prolonging the correction time
3Productivity
If the critical dimension is reduced to increase device density, then more devices can be disposed on each chip, but distortion occurs during photolithography pattern transfer
Solution Approach 1:
The scattering bar is positioned in advance to preemptively counteract the optical distortion that occurs during photolithography. By having the scattering bar pre-embedded at calculated positions, the optical proximity correction acts beforehand to compensate for the distortion that would otherwise occur when transferring patterns at reduced critical dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The embedded scattering bar effectively alleviates distortion impacts on the mask pattern, improving correction efficiency and reducing processing time by embedding the bar at specific locations based on defect dimensions and pattern shapes.
Implementation Method 1
a scattering bar (SBar) is formed on the mask, so as to implement OPC
Data Source
AI summary
The present disclosure teaches a photolithography plate and a mask correction method, and relates to the field of semiconductor technologies. In forms of the mask correction method, a patterned mask is formed on a substrate, a location of a scattering bar embedded in the substrate is determined according to the mask, and an opening is formed at the determined location so as to embed the scattering bar in the opening. A scattering bar is embedded in a substrate of a photolithography plate so as to effectively avoid the impact of the scattering bar on a mask pattern, reduce a deposition loss, improve the correction effect, and shorten a correction time.