Embedded Semiconductor Wiring with Composite Insulation
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Solution Overview
Problem
Current technologies face challenges in forming miniaturized semiconductor devices with low resistance wiring layers that have stable and excellent electrical characteristics, requiring advancements in manufacturing methods to achieve high yield and reliable devices with precise electrical connections.
Innovation Solution
A method involving the sequential formation of insulating films and conductors, including chemical mechanical polishing, to create a structure where conductors are embedded within insulators, ensuring stable electrical connections and low resistance, with specific materials like aluminum and silicon oxides used to enhance hydrogen and oxygen blocking properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If wiring layers are miniaturized to achieve smaller device size, then device size is reduced, but electrical characteristics and resistance stability deteriorate
Solution Approach 1:
The patent employs a composite structure consisting of a conductor layer embedded in an insulating film, where the insulating film has specific properties (hydrogen blocking, oxygen blocking) that complement the conductor's electrical function. This composite approach allows miniaturization while maintaining electrical stability through the protective insulating environment.
Solution Approach 2:
The insulating film is formed with different local properties: regions with high hydrogen blocking capability and regions with high oxygen blocking capability are created in specific locations within the insulating layer. This local differentiation allows the structure to protect miniaturized conductors from specific degradation mechanisms at critical interfaces.
2Loss of energy
If conductor thickness is reduced to achieve lower resistance, then resistance decreases, but manufacturing precision and connection reliability worsen
Solution Approach 1:
The patent changes the parameters of the insulating film (hydrogen blocking property, oxygen blocking property, thickness distribution) to optimize the environment for thin conductors. By adjusting these insulating film parameters, the system achieves reliable connections with reduced conductor thickness, as the insulating film protects against degradation that would otherwise require thicker conductors.
Solution Approach 2:
The insulating film is formed beforehand to provide protective coverage for the conductor layer. This prior cushioning prevents hydrogen and oxygen from reaching the conductor, thereby protecting it from degradation before manufacturing issues can occur. This approach enables use of thinner conductors with maintained reliability.
3Reliability
If multiple insulating films are formed to improve electrical characteristics, then electrical stability improves, but device complexity and manufacturing steps increase
Solution Approach 1:
The insulating film is designed to perform multiple functions simultaneously: it provides hydrogen blocking, oxygen blocking, and physical isolation for the conductor. By making the insulating film multi-functional, the patent achieves improved electrical characteristics without proportionally increasing device complexity, as one layer accomplishes what would otherwise require multiple specialized layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the fabrication of semiconductor devices with improved electrical characteristics, high yield, and reliable connections, addressing the need for miniaturized and efficient semiconductor devices with stable and low-resistance wiring.
Implementation Method 1
forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor
Data Source
AI summary
A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured through the steps of forming a first insulating film over a substrate, forming a second insulating film over the first insulating film, removing part of the first insulating film and part of the second insulating film to form a first opening, forming a first conductor in the first opening and over a top surface of the second insulating film, and forming a second conductor by planarizing a surface of the first conductor so as to remove part of the first conductor.