Embedded Thermal Shunt Structure for Dense Semiconductor Cooling
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Solution Overview
Problem
Semiconductor devices face challenges in heat dissipation due to increasing power density, leading to performance degradation, as traditional thermal shunt structures require additional metallization layers that increase device area and reduce density, and may not be efficiently connected to heat generating devices.
Innovation Solution
A semiconductor structure with a thermal shunt structure positioned proximal to the heat generating device, where the upper portion is in the interlayer dielectric material and the lower portion is in the substrate, allowing for efficient heat dissipation without connecting to the metallization layer, thus maintaining device density and compact size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If additional metallization layers are integrated for heat conduction, then heat dissipation capability is improved, but device area increases and device density reduces
Solution Approach 1:
The thermal shunt structure transitions from a planar metallization layer approach to a vertical three-dimensional structure that extends through the interlayer dielectric and into the substrate. This vertical dimensionality allows heat dissipation without increasing the horizontal device footprint, thereby maintaining device density while improving thermal management.
Solution Approach 2:
The thermal shunt structure is nested within the existing device architecture, with the upper portion embedded in the interlayer dielectric and the lower portion extending into the substrate. This nesting approach integrates heat dissipation functionality within the existing structure without requiring additional lateral space.
2Temperature
If thermal shunt structure is placed close to heat generating device, then heat transfer efficiency is improved, but electrical isolation becomes difficult to ensure
Solution Approach 1:
The interlayer dielectric material serves as an intermediary between the heat generating device and the thermal shunt structure. This dielectric layer provides electrical isolation while allowing thermal conduction, enabling the thermal shunt to be positioned close to the heat source without compromising electrical isolation.
Solution Approach 2:
The thermal shunt structure exhibits different functional properties in different regions: the upper portion in the interlayer dielectric provides electrical isolation, while the lower portion in the substrate provides thermal conduction. This local differentiation of properties allows simultaneous achievement of electrical isolation and thermal efficiency.
3Temperature
If traditional thermal shunt structure with metallization connection is used, then heat dissipation is achieved, but device complexity and area increase
Solution Approach 1:
The thermal shunt structure performs multiple functions simultaneously: it conducts heat from the heat generating device to the substrate, provides electrical isolation through the interlayer dielectric, and maintains device density. This multi-functionality eliminates the need for separate metallization layers dedicated to heat conduction, thereby reducing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient heat transfer from the heat generating device to the substrate, preventing performance degradation by allowing for compact and high-density semiconductor structures without the need for additional metallization layers.
Implementation Method 1
Heat may be dissipated through upper metallization layers to an external heat sink. The thermal shunt structure enables efficient heat transfer from the heat generating device to the substrate.
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure comprises a heat generating device arranged over a substrate. An interlayer dielectric (ILD) material may be arranged over the heat generating device and the substrate. A metallization layer may be arranged over the interlayer dielectric material. A thermal shunt structure may be arranged proximal the heat generating device, whereby an upper portion of the thermal shunt structure may be arranged in the interlayer dielectric material and may be lower than the metallization layer, and a lower portion of the thermal shunt structure may be arranged in the substrate.