Embedded Transistor Devices for Resistive Heating Reduction
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Solution Overview
Problem
Large-current transistors in electronic devices face limitations due to resistive heating, which is exacerbated by uneven current distribution and material breakdown at the source-drain interface, leading to reduced performance and device lifetime.
Innovation Solution
A multi-component transistor structure is developed, where components are electrically connected in parallel with reduced connection resistances, allowing for more efficient current distribution and reduced heating by using smaller, high-performance transistors stacked on a substrate with optimized materials for different tasks, such as silicon for control circuits and compound semiconductors for transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an extensive interface between source and drain portions is provided to reduce current density, then device lifetime and functionality are improved, but resistive heating increases due to current traveling along the interface
Solution Approach 1:
The patent divides a single large-current transistor into multiple smaller transistor components connected in parallel. Each component has its own source-drain interface, distributing the total current across multiple paths. This segmentation reduces the current density on each individual interface while maintaining the total current handling capability, thereby reducing resistive heating on each interface and improving overall device reliability.
2Ease of operation
If source and drain materials are used that are not perfectly conductive, then device functionality is achieved, but current distribution becomes uneven with greater current density near external connections, exacerbating heating and material breakdown
Solution Approach 1:
By segmenting the transistor into multiple parallel components, the patent creates multiple independent current paths. This distributes the current more evenly across all components, preventing concentration near external connections and reducing localized heating and material breakdown.
Solution Approach 2:
The patent applies different materials optimized for specific functions: compound semiconductors (e.g., GaN) for the transistor components where high current handling and heat resistance are critical, and silicon for control circuits where different electrical characteristics are beneficial. This local optimization addresses the material breakdown issue by using materials best suited for each specific region's requirements.
3Power
If multiple power transistors are made in separate substrates and electrically connected in parallel, then current handling capacity is increased, but resistive heating still limits the transistor system performance
Solution Approach 1:
The patent integrates multiple transistor components on a single substrate rather than using separate substrates. This integration dramatically reduces the length and resistance of interconnections between components. The parallel configuration maintains high current handling capacity while the short internal connections minimize resistive heating losses compared to separately connected substrates.
Solution Approach 2:
The patent combines multiple transistor components and their interconnections into a single integrated structure on one substrate. This merging eliminates the need for external connections between separate substrates, reducing connection resistance and associated heating, while maintaining the parallel configuration's current handling capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces resistive losses, improves electrical efficiency, and enhances performance by distributing heat generation and current flow more evenly, leading to increased power density and switching speeds while extending device lifetime.
Implementation Method 1
One or more component connections each have a respective connection resistance, and each is electrically connected to respective transistor elements of the components
Implementation Method 2
The heating is in part due to resistive heating in the transistor materials, including resistive heating in the gate, the source, and the drain of the transistor
Data Source
AI summary
An embedded component stack includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, a first component disposed and embedded entirely within the first dielectric layer and entirely between the first metal layer and the second metal layer, a second dielectric layer disposed on the second metal layer, and a second component disposed on or embedded entirely within the second dielectric layer. The first and second components can be bare, unpackaged dies disposed over the metal layers by micro-transfer printing. The metal layers can be patterned and can be electrically connected to the components. The first component can be rotated with respect to the second component. Multiple components can be embedded in one or more of the dielectric layers.