Embedded TSV Bridge Hybrid Bonding for Low-Standoff Packaging
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Solution Overview
Problem
Existing embedded bridge solutions in chiplet architectures face challenges such as limited power capacity, increased standoff height due to solder interconnects, and underfill uniformity issues, which affect reliability and performance.
Innovation Solution
The implementation of a hybrid bonding architecture that uses direct copper-to-copper bonding and dielectric-to-dielectric bonding, along with the use of porous bump architectures, to couple the bridge to the package substrate, addressing issues of power delivery and underfill uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional solder interconnect solutions are used to connect the bridge to the package substrate, then the bridge can be mounted, but the current carrying capacity is limited and the standoff height increases
Solution Approach 1:
The patent changes the interconnect material from traditional solder to copper, fundamentally altering the electrical and mechanical parameters. This material substitution enables higher current carrying capacity while reducing the required interconnect height, directly resolving the technical contradiction between reliability and standoff height
Solution Approach 2:
The patent employs a hybrid bonding architecture that combines copper-to-copper bonding with dielectric-to-dielectric bonding. This composite approach integrates multiple material systems to achieve both high current capacity through copper and proper mechanical support through dielectric materials, eliminating the limitations of single-material solder solutions
2Reliability
If solder interconnects are used to connect the bridge, then connection is achieved, but the cavity depth in the package substrate must increase
Solution Approach 1:
By changing the interconnect material from solder to copper and implementing direct copper-to-copper bonding, the patent reduces the vertical space required for the interconnect. This parameter change allows shallower cavities in the package substrate while maintaining or improving connection reliability
Solution Approach 2:
The patent extracts the excessive height requirement by eliminating the need for thick solder layers. The copper-based hybrid bonding architecture achieves reliable connections with significantly reduced interconnect thickness, thereby reducing the cavity depth needed in the package substrate
3Area of stationary object
If tight pitches and small gaps are used for bridge integration, then footprint is reduced, but underfill material dispensing becomes difficult leading to voids
Solution Approach 1:
The patent utilizes porous bump architectures that can absorb and wick underfill material through capillary action. This porous structure enables uniform underfill distribution even in tight pitch applications, eliminating voids while maintaining small bridge footprints
Solution Approach 2:
The porous bump structure acts as an intermediary between the bridge and package substrate, facilitating controlled underfill material flow. This intermediate porous layer mediates the dispensing process, ensuring uniform underfill distribution in challenging tight pitch configurations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the current carrying capacity, reduces the standoff height, and improves underfill uniformity, leading to increased reliability and performance of the package substrate.
Implementation Method 1
The porous bump architecture allows underfill material to wick through the bump, which can improve underfill uniformity and reduce voids
Implementation Method 2
The implementation of a hybrid bonding architecture that uses direct copper-to-copper bonding and dielectric-to-dielectric bonding
Data Source
AI summary
Embodiments disclosed herein include bridge structures for package substrates. In an embodiment, a package substrate comprises a substrate that is a dielectric material. In an embodiment, a cavity is formed into the substrate. A first pad is on a bottom surface of the cavity, and a die is at least partially in the cavity. In an embodiment, a via passes through at least a portion of a thickness of the die, and a second pad is on the die. In an embodiment, the second pad directly contacts the first pad, and the first pad is the only electrically conductive structure between the via and the second pad.