Embedded Vertical Capacitor Stacks for Low-ESR High-Density Integration
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Solution Overview
Problem
There is a need for vertical capacitors with improved performance in terms of low equivalent series resistance, capacitance, and functional density, while maintaining modularity and customizability, particularly in stackable and embeddable configurations.
Innovation Solution
The development of stackable and embeddable vertical capacitors with alternating orientations of cathode and anode elements, connected through interconnecting terminals, and embedded within substrates, utilizing materials like titanium, copper, and dielectric layers, with methods involving electroplating and lamination to minimize series resistance and maximize capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional capacitor configurations (rolled cylindrical, deep trenches, stacked layers) are used, then surface area per unit volume is optimized, but equivalent series resistance remains high and functional density is limited
Solution Approach 1:
The patent transitions from planar/2D capacitor configurations to vertical/3D structures by stacking multiple capacitor elements vertically with alternating cathode-anode orientations. This dimensional change increases surface area per unit volume while maintaining compact form factor, thereby reducing equivalent series resistance without proportionally increasing device complexity
Solution Approach 2:
The patent embeds vertical capacitor elements within substrate cavities, nesting the capacitor structure inside the substrate. This nesting approach maximizes space utilization, increases functional density, and integrates the capacitor seamlessly into the substrate without requiring additional external space
2Quantity of substance
If capacitor elements are stacked vertically with alternating orientations, then functional density and capacitance increase, but manufacturing complexity increases
Solution Approach 1:
The patent divides the capacitor into discrete, modular vertical elements that can be independently fabricated and then stacked. Each element consists of standardized components (electrodes, dielectric layers, terminals) that can be manufactured using conventional semiconductor processes, reducing overall fabrication complexity while enabling high capacitance through parallel stacking
Solution Approach 2:
The patent performs preliminary actions by pre-forming the vertical capacitor elements with their electrode patterns, dielectric layers, and terminal structures before final assembly. This includes pre-defining cavities in the substrate and pre-embedding isolation materials, which simplifies the subsequent stacking and integration processes
3Productivity
If vertical capacitor elements are embedded in substrates, then integration density improves, but ease of operation and customization are reduced
Solution Approach 1:
The patent designs universal vertical capacitor elements with standardized terminal configurations and embedding structures that can be adapted to different substrate types and application requirements. The modular architecture allows the same basic element design to be customized through variations in stacking sequences, terminal connections, and embedding depths, maintaining adaptability while achieving high integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves lower equivalent series resistance and higher capacitance, enabling modular and customizable capacitor structures suitable for integration into various substrates, supporting efficient signal routing and volume manufacturing.
Implementation Method 1
electroplating and lamination to minimize series resistance and maximize capacitance
Implementation Method 2
electroplating and lamination to minimize series resistance and maximize capacitance
Data Source
AI summary
A stackable, embeddable capacitor has one or more first type vertical capacitor elements, each of which has a top cathode, a bottom anode, and a first orientation central capacitance region between the top cathode and the bottom anode. The capacitor also has one or more second type vertical capacitor elements, each of which has a bottom cathode, a top anode, and a second orientation central capacitance region between the bottom cathode and the top anode. The second type vertical capacitor elements are alternatingly stacked on the first type vertical capacitor elements.


