EMI-Absorbing Metal Bar Layout for Intra-Package RF Shielding
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Solution Overview
Problem
Semiconductor devices are susceptible to electromagnetic interference (EMI) due to reflected signals from conductive barriers, which cause interference within the component that emitted the RF signals, necessitating an improved method for intra-package EMI shielding.
Innovation Solution
A system-in-package (SiP) module is created using an EMI-absorbing metal bar coated with materials like polymeric resin-based magnetic metal flake fillers or nickel, which is strategically positioned between semiconductor die to absorb and trap RF signals, reducing reflection and interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an electrically conductive barrier is used for EMI shielding, then EMI radiation between adjacent components is shunted to ground, but the conductive barrier reflects a significant portion of EMI radiation causing interference within the emitting component
Solution Approach 1:
The patent applies magnetic lossy material that converts reflected EMI radiation into thermal energy through magnetic hysteresis loss, transforming the harmful reflected signal into beneficial heat dissipation while maintaining shielding effectiveness
Solution Approach 2:
The patent uses composite material combining magnetic particles (such as ferrite) with a polymer matrix to create a material that simultaneously provides electrical conductivity for grounding and magnetic properties for absorbing EMI radiation without significant reflection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The EMI-absorbing metal bar effectively reduces intra-package EMI by trapping and absorbing RF signals, minimizing interference between semiconductor components and enhancing the overall performance of semiconductor devices.
Implementation Method 1
An electromagnetic interference (EMI) absorbing metal bar is disposed between the semiconductor die
Implementation Method 2
The EMI-absorbing material is a polymeric resin-based magnetic metal flake filler
Data Source
AI summary
A semiconductor device has a substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. A metal bar has an EMI-absorbing material disposed over the metal bar. The metal bar is disposed over the substrate between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first semiconductor die, second semiconductor die, and metal bar. A shielding layer is formed over the encapsulant.