Semiconductor EMI Shielding via Conductive Channel Integration
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Solution Overview
Problem
Semiconductor devices face challenges in isolating themselves from electromagnetic interference (EMI) and radio frequency interference (RFI), which can disrupt their operation, especially in high-frequency applications.
Innovation Solution
A method is developed to form a shielding layer over semiconductor die using conductive material, where a channel is created through an encapsulant around the die, and the conductive material is electrically connected to the shielding layer, providing effective EMI and RFI shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a shielding layer is formed over the semiconductor die, then EMI and RFI protection is improved, but the device complexity and manufacturing steps increase
Solution Approach 1:
The patent combines the shielding layer formation with the existing encapsulant structure by depositing the conductive shielding material directly onto the encapsulant surface that already surrounds the semiconductor die. This integration approach allows the shielding function to be added without requiring separate manufacturing steps for structural support, thereby improving EMI/RFI protection while minimizing increases in device complexity and manufacturing complexity.
2Reliability
If conductive material is deposited in channels around the semiconductor die, then EMI shielding effectiveness is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent forms channels through the encapsulant material before depositing the conductive shielding layer. By preparing these channels in advance, the subsequent conductive material deposition can proceed efficiently with proper adhesion and coverage. This preliminary channel formation simplifies the overall manufacturing process compared to attempting to form channels after shielding layer deposition, as it allows for better process control and integration with existing encapsulation workflows.
3Productivity
If the semiconductor device footprint is reduced, then productivity and efficiency are improved, but EMI shielding becomes more challenging
Solution Approach 1:
The patent addresses EMI shielding in smaller footprint devices by extending the shielding approach from traditional planar configurations to three-dimensional structures. Conductive shielding material is deposited on the encapsulant surface and within channels that wrap around the semiconductor die in multiple dimensions. This vertical and circumferential shielding arrangement provides effective EMI protection even when the device footprint is minimized, allowing compact device design without sacrificing shielding effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively isolates semiconductor devices from EMI and RFI, enhancing their performance and reliability in high-frequency applications by routing interfering signals to an external low-impedance ground point.
Implementation Method 1
depositing a conductive material in the channel around the first semiconductor die and electrically connected to the shielding layer
Data Source
AI summary
A semiconductor device has a plurality of first semiconductor die mounted over an interface layer formed over a temporary carrier. An encapsulant is deposited over the first die and carrier. A flat shielding layer is formed over the encapsulant. A channel is formed through the shielding layer and encapsulant down to the interface layer. A conductive material is deposited in the channel and electrically connected to the shielding layer. The interface layer and carrier are removed. An interconnect structure is formed over conductive material, encapsulant, and first die. The conductive material is electrically connected through the interconnect structure to a ground point. The conductive material is singulated to separate the first die. A second semiconductor die can be mounted over the first die such that the shielding layer covers the second die and the conductive material surrounds the second die or the first and second die.