Integrated Emitter Structure for Dark Breakdown Voltage Detection
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Solution Overview
Problem
Existing methods for determining the breakdown voltage of photo sensors like SPADs and APDs are unreliable in dark or low light environments, leading to delayed breakdown and incorrect bias voltage application, which can impair device performance.
Innovation Solution
Incorporating an emitter with heavily n-doped and p-doped regions adjacent to the optical active region to generate charge carriers and trigger breakdown, allowing for precise breakdown voltage measurement without external heat or light sources.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If external heat or light sources are used to trigger breakdown, then breakdown voltage can be measured, but the measurement becomes unreliable in dark or low light environments
Solution Approach 1:
The patent introduces an intermediary light-emitting component (such as an LED or laser) integrated with the photodetector to provide the necessary photons for triggering avalanche breakdown. This mediator eliminates dependency on external light sources, enabling reliable breakdown voltage measurement in dark or low light environments while maintaining measurement precision across varying environmental conditions.
2Ease of operation
If external heat or light sources are used to trigger breakdown, then breakdown can be initiated, but additional external equipment is required
Solution Approach 1:
The patent merges the light-emitting component directly with the photodetector structure, integrating the breakdown triggering function into the device itself. This combination eliminates the need for separate external heat or light sources, simplifying the overall system while maintaining the capability to reliably initiate avalanche breakdown for voltage measurement.
3Reliability
If the sensor is reverse biased over breakdown voltage, then single photons can be detected, but incorrect bias voltage application impairs device performance
Solution Approach 1:
The patent employs a feedback mechanism where the integrated light-emitting component triggers breakdown at the precise moment when the reverse bias voltage reaches the breakdown threshold. By detecting this breakdown event and using it as feedback, the system can accurately determine the breakdown voltage and apply the correct bias voltage for optimal single photon detection performance, preventing both under-biasing and over-biasing conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables reliable breakdown voltage detection in dark environments, independent of environmental factors, with minimal impact on device performance and footprint.
Implementation Method 1
the emitter configured to provide charge carriers to trigger breakdown of the pn-junction
Data Source
AI summary
A semiconductor structure for measuring a breakdown voltage of a pn-junction, said semiconductor structure comprises:a substrate;a sensor device comprising an optical active region comprising said pn-junction in said substrate, wherein said sensor device is configured to apply a reverse bias voltage to said pn-junction; andan emitter located adjacent to said optical active region in said substrate and configured to provide charge carriers to said optical active region in order to trigger breakdown of said pn-junction when said reverse bias voltage is equal to or greater than said breakdown voltage.