Emitter Electrode Layout Across Gate Finger for Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices, such as insulated gate bipolar transistors (IGBTs), face challenges in heat dissipation and current flow efficiency due to the limitations in the design of emitter electrodes and gate fingers, which restrict the size and performance of the devices.
Innovation Solution
The semiconductor device incorporates a trench-gate structure with a gate finger and emitter electrode configuration that includes a peripheral electrode portion and a connecting portion, where the gate finger is embedded in the insulation film and connected to the gate electrode, allowing for increased emitter electrode size and improved heat dissipation by reducing current path length through the well region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the emitter electrode size is increased to enhance heat dissipation, then heat dissipation capability is improved, but the device area and structural complexity increase
Solution Approach 1:
The emitter electrode is configured to extend in the depth direction (z-direction) beneath the gate finger, utilizing the third dimension to increase heat dissipation area without proportionally increasing the planar device area. This vertical extension allows heat to be dissipated from both the top surface and the side surfaces of the emitter electrode.
Solution Approach 2:
The emitter electrode is divided into multiple segments: a first emitter electrode portion extending from the front surface, a second emitter electrode portion extending from the back surface, and these portions are electrically connected. This segmentation allows heat dissipation from multiple locations and paths, improving overall thermal management while maintaining a compact footprint.
2Adaptability or versatility
If the current flow path through the well region is lengthened, then the well region can serve additional functions, but heat generation increases due to longer current path
Solution Approach 1:
The well region is configured with non-uniform properties: it has a first width at the front surface and a second width at the back surface, with the second width being greater than the first. This local variation in width allows the well region to provide different functions at different locations while optimizing the current flow path to minimize resistance and heat generation in critical areas.
Solution Approach 2:
The emitter electrode extends in the depth direction beneath the gate finger, creating a three-dimensional current flow path. This vertical extension shortens the effective current path length through the well region by providing alternative current flow routes, thereby reducing resistive heating while maintaining the well region's functional versatility.
3Reliability
If the gate finger is embedded deeper in the insulation film, then gate control is improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The insulation film is formed to a predetermined thickness before the gate finger is embedded. This preliminary formation of the insulation film with sufficient thickness ensures that the gate finger can be embedded to the required depth for effective gate control without requiring complex post-processing steps to achieve the necessary insulation thickness.
Solution Approach 2:
The thickness of the insulation film is optimized to balance gate control effectiveness and manufacturing ease. By selecting an appropriate insulation film thickness parameter, the gate finger can be embedded to an effective depth for control while keeping the overall structure manufacturable with standard processes.
Data Source
AI summary
This semiconductor device comprises a peripheral region surrounding a cell region, a gate electrode disposed in the peripheral region, and an emitter electrode. The emitter electrode includes a cell electrode portion, a peripheral electrode portion formed at a distance from the cell electrode portion in the peripheral region, and a connecting portion connecting the cell electrode portion and the peripheral electrode portion. The peripheral region includes a well region formed to surround the cell region, an insulating film and an intermediate insulating film that cover the well region, and a gate finger embedded in the insulating films. The connecting portion is formed across the gate finger on the intermediate insulating film. The peripheral electrode portion is electrically connected to the well region.