Inverter Emitter Wire Layout for Accurate Bond Life Prediction

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Solution Overview

Problem

Existing semiconductor devices face challenges in accurately predicting the life span due to the influence of main wire deterioration on potential changes, leading to inaccurate life prediction.

Innovation Solution

A semiconductor device configuration featuring a semiconductor chip with distinct emitter wires of varying diameters and locations, where a larger diameter second emitter wire is more prone to deterioration, allowing for accurate measurement of potential differences and minimizing the impact of main wire deterioration, thereby enhancing life prediction accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a main wire is used to predict the life of the semiconductor device by measuring potential changes, then the life prediction function is provided, but the prediction accuracy deteriorates due to the inclusion of main wire deterioration effects in the potential changes

Engineering Contradiction:
Improvelife prediction accuracyVSAvoidprediction reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent divides the wire system into two distinct segments: a main wire for current conduction and a separate life monitoring wire for deterioration detection. This segmentation allows the monitoring function to be independent from the main current-carrying function, enabling accurate life prediction without interference from main wire deterioration effects.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The life monitoring function is extracted from the main wire system by introducing a dedicated life monitoring wire that is electrically connected in parallel. This extracted monitoring path isolates the measurement function from the harmful effects of main wire deterioration, allowing accurate potential change measurement that reflects only the monitoring wire's condition.

Inventive Principle:
Principle #2Taking out (Extraction)

2Area of stationary object

If the first emitter wire is located close to the third emitter wires (main wires), then the device structure is compact, but the measurement accuracy deteriorates due to interference from main wire deterioration

Engineering Contradiction:
Improvedevice areaVSAvoidpotential measurement accuracy
Core Design Contradiction:
Area of stationary objectVSMeasurement precision

Solution Approach 1:

The life monitoring wire is extracted and positioned at a specific distance from the main wires, creating a separate measurement path that is electrically and physically isolated. This extraction ensures that potential measurements reflect only the monitoring wire's condition, not the main wires' deterioration, while still maintaining a compact overall device structure.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS20240387302A1Semiconductor device and inverter device
Publication Date: 2024.11.21 MITSUBISHI ELECTRIC CORP
  • US20240387302A1 patent drawing
  • US20240387302A1 patent drawing
  • US20240387302A1 patent drawing

AI summary

A semiconductor device includes: a semiconductor chip, a first emitter electrode, a second emitter electrode, a third emitter electrode, a first emitter wire, a second emitter wire, and a plurality of third emitter wires. The first emitter wire connects the first emitter electrode and an emitter pattern of the semiconductor chip. The second emitter wire connects the second emitter electrode and the emitter pattern of the semiconductor chip. The plurality of third emitter wires connect the third emitter electrode and the emitter pattern of the semiconductor chip. A diameter of the second emitter wire is larger than a diameter of the first emitter wire and a diameter of each of the plurality of third emitter wires. The first emitter wire is located away from the plurality of third emitter wires.