Integrated EML-SOA Optical Module for High Output Power
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The low output optical power of optical modules in passive optical networks restricts the development of high-bandwidth access networks, as it necessitates high-sensitivity components like APD chips, which are prone to burnage and increase costs.
Innovation Solution
An optical module is fabricated by integrating an electro-absorption modulated laser with a semiconductor optical amplifier, increasing the output optical power and allowing the use of lower-sensitivity components like PIN chips, thereby reducing networking costs and promoting high-bandwidth development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the output optical power of the optical module is increased, then the sensitivity requirement of the ONU side component is reduced, but the device complexity increases due to integration of multiple components
Solution Approach 1:
The patent combines the laser, electro-absorption modulator, and semiconductor optical amplifier into a single integrated optical module. The laser and electro-absorption modulator form an electro-absorption modulated laser (EML) structure, which is then integrated with the semiconductor optical amplifier (SOA) in a unified device. This merging of multiple functional components into one integrated module increases the output optical power to 2-6 dBm while managing the complexity through unified design and fabrication processes.
2Reliability
If the APD chip is used to achieve high sensitivity, then the power budget requirement is met, but the reliability decreases due to burnage risk
Solution Approach 1:
The patent converts the harmful effect of high optical power (which causes APD burnage) into a benefit by using it to drive lower-sensitivity PIN photodetectors instead. The integrated EML-SOA module generates sufficient optical power (2-6 dBm) that would be dangerous for APD chips, but this same high power level is perfectly suited for robust PIN photodetectors, eliminating the burnage risk while maintaining system performance.
3Adaptability or versatility
If the low output optical power is maintained, then the device complexity is reduced, but the adaptability decreases due to restriction on ONU side components
Solution Approach 1:
The patent changes the key parameter of output optical power from low (prior art) to high (2-6 dBm) through the integration of the semiconductor optical amplifier with the electro-absorption modulated laser. This parameter change enables the system to support a broader range of ONU side components, including cost-effective PIN photodetectors, thereby improving adaptability and versatility of the optical communication system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of an electro-absorption modulated laser with a semiconductor optical amplifier enhances optical power output, enabling the use of low-sensitivity components on the ONU side, reducing costs and facilitating the development of high-bandwidth access networks.
Implementation Method 1
the electro-absorption modulator performs signal modulation on the optical signal output by the laser
Implementation Method 2
the semiconductor optical amplifier amplifies the optical signal modulated by the electro-absorption modulator
Data Source
Figure 1~2
Figure 3~4
Figure 5
AI summary
Embodiments of the present invention disclose an optical module and a fabrication method thereof. The optical module includes an optical component, a substrate, and a laser, an electro-absorption modulator, and a semiconductor optical amplifier that grow on the substrate, where: the electro-absorption modulator is located between the laser and the semiconductor optical amplifier; the laser is configured to output an optical signal after power-on; the electro-absorption modulator is configured to perform signal modulation on the optical signal output by the laser; the semiconductor optical amplifier is configured to amplify the optical signal modulated by the electro-absorption modulator; the optical component is configured to perform deflection and convergence for the optical signal amplified by the semiconductor optical amplifier and output the optical signal. According to the embodiments of the present invention, an electro-absorption modulated laser is integrated with a semiconductor optical amplifier, and an optical signal output by the laser is amplified, thereby increasing optical power output by an optical module and having a lower requirement on sensitivity of an optical component on an ONU side.