EMR Sensor Hybrid Structure Reducing Noise
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Solution Overview
Problem
Existing magnetic sensors, such as EMR and Hall effect sensors, face limitations in sensitivity and noise levels, particularly in detecting magnetic fields, due to high output resistance and material limitations.
Innovation Solution
The development of a semiconductor/metal hybrid structure with a conductive semiconductor layer and a metallic shunt, which reduces output resistance and enhances sensitivity by using materials like indium antimonide, indium arsenide, and gold, and includes specific configurations for voltage and current leads to improve measurement accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional EMR sensor structures with symmetric lead arrangements are used, then the sensor can be manufactured with standard processes, but the output resistance remains high resulting in high noise levels
Solution Approach 1:
The patent applies asymmetry by positioning voltage leads and current leads at different locations on the semiconductor layer, specifically placing voltage leads at positions that maximize voltage output while positioning current leads to optimize current distribution. This asymmetric arrangement reduces output resistance and noise levels compared to symmetric configurations.
Solution Approach 2:
The patent transitions from planar two-terminal configurations to four-terminal arrangements with leads positioned at different spatial locations on the semiconductor layer. This dimensional expansion in lead configuration space enables independent optimization of voltage measurement and current injection paths, reducing noise while maintaining manufacturability.
2Measurement precision
If standard semiconductor materials are used in Hall effect sensors, then the sensors can be manufactured with conventional processes, but sensitivity and noise performance are limited
Solution Approach 1:
The patent employs composite material structures combining semiconductor layers with specific doping profiles and metallic contact layers. The semiconductor layer uses controlled doping to achieve optimal carrier concentration and mobility, while metallic contacts provide low-resistance connections. This composite approach enhances sensitivity and reduces noise while remaining compatible with conventional semiconductor manufacturing processes.
Solution Approach 2:
The patent optimizes sensor performance by carefully controlling material parameters including doping concentration, layer thickness, and carrier mobility. These parameter adjustments enhance the Hall effect response and reduce thermal noise without requiring fundamentally new manufacturing processes, maintaining ease of manufacture while improving measurement precision.
3Measurement precision
If the semiconductor layer dimensions are increased to improve signal output, then the sensitivity may improve, but the device area and complexity increase
Solution Approach 1:
The patent applies local quality by creating regions of different doping concentrations within the semiconductor layer, with heavily doped regions near contact points for low resistance and lightly doped regions in the bulk for high mobility. This localized variation in material properties optimizes signal output without requiring large overall device dimensions, maintaining compact geometry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This hybrid structure significantly reduces noise levels and enhances the sensitivity of magnetic field detection, offering several hundred times improvement in EMR effect sensors and low-noise performance in Hall sensors, making them more effective for magnetic field measurement.
Implementation Method 1
An EMR sensor operates based on an EMR effect. Broadly speaking, the EMR effect quantifies scattering of electrons at a material interface when an electric current is applied to the material. The scattering occurs due to an interaction between the magnetic field and electrons in at least one of the materials comprising the sensor.
Implementation Method 2
Broadly speaking, the Hall effect quantifies a shearing force caused by interaction between the magnetic field and electrons in the current applied to the material.
Implementation Method 3
In an EMR effect sensor, the Lorentz force induced by a magnetic field may cause a redistribution of the electric current density between adjacent semiconductor and metal layers resulting in resistance changes.
Data Source
AI summary
Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.