Encapsulated Interconnect Structures for Thick Photonic Bridge Dies
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Solution Overview
Problem
Conventional conductive posts are insufficient to provide direct electrical interconnect through the encapsulant between the first and second redistribution layers due to the thickness of photonic semiconductor dies, which exceeds the practical height limit of conventional conductive posts.
Innovation Solution
The formation of encapsulated interconnect structures, including encapsulated interconnect post structures, e-bar structures, and vertical loop structures, which are embedded within the encapsulant to span the gap between redistribution layers, providing electrical connectivity despite the thickness of photonic semiconductor dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional conductive posts are used for electrical interconnect, then the structure is simple and manufacturing is easy, but the posts are insufficient to span the gap between redistribution layers due to the thickness of photonic semiconductor dies
Solution Approach 1:
The conductive post is divided into multiple segments or layers, with each segment being formed separately through sequential deposition and patterning processes. This segmentation allows the total height to exceed the limitations of conventional single-step post formation while maintaining manufacturing feasibility through modular construction
Solution Approach 2:
The interconnect structure transitions from a simple vertical post to a multi-dimensional architecture incorporating horizontal trace layers and vertical conductive elements. This dimensional expansion allows the structure to span greater vertical distances while providing lateral routing paths, effectively solving the height limitation through spatial complexity
2Adaptability or versatility
If photonic semiconductor die thickness is increased to accommodate photonic circuits, then photonic functionality is achieved, but the gap between redistribution layers becomes too large for conventional conductive posts to bridge
Solution Approach 1:
An encapsulant material is introduced as an intermediary substance that fills the large gap between redistribution layers created by thick photonic die. This encapsulant provides mechanical support and electrical insulation, enabling the formation of reliable conductive pathways through or alongside it, thus bridging the gap that would otherwise be too large for direct conductive posts
Solution Approach 2:
The interconnect structure employs composite construction combining conductive materials (metals, conductive pastes) with the non-conductive encapsulant material. This composite approach allows the structure to span the large vertical gap while maintaining electrical conductivity where needed and providing mechanical stability and insulation where required, ensuring reliable electrical interconnection despite the thick photonic die
Data Source
AI summary
A semiconductor device has a first interconnect structure, second interconnect structure, and a semiconductor die disposed between the first interconnect structure and second interconnect structure. The semiconductor die can have a photonic area. An embedded interconnect structure is disposed between the first interconnect structure and second interconnect structure. The embedded interconnect structure has a height sufficient to span a gap between the first interconnect structure and second interconnect structure. The embedded interconnect structure can be a plurality of conductive posts, and a second encapsulant deposited around the conductive posts. The embedded interconnect structure can be a plurality of e-bar structures, and a second encapsulant deposited around the e-bar structures. The embedded interconnect structure can also be a plurality of vertical loop wires, and a second encapsulant deposited around the vertical loop wires. A first encapsulant is deposited around the semiconductor die and embedded interconnect structure.