Microstructured Energy Filter Frame for Complex Ion Doping Profiles
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Solution Overview
Problem
Current ion implantation technologies face challenges in achieving high throughput, ease of filter replacement, production of complex vertical doping profiles, and maintaining lateral homogeneity, particularly in semiconductor materials like SiC, where traditional methods result in imprecise doping and high costs due to complex filter structures and handling difficulties.
Innovation Solution
The development of an energy filter system with a microstructured filter frame and multifilter concept, allowing for easy handling and replacement, high-throughput capabilities, and the production of complex doping profiles through triangular and trapezoidal prism-shaped structures, combined with cooling systems and collimator structures to ensure lateral homogeneity and efficient ion distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional ion implantation methods are used, then doping profiles can be produced, but the throughput is low and filter replacement is difficult
Solution Approach 1:
The filter system is divided into multiple individual filters arranged in parallel within a filter frame, allowing selective replacement of single filters without replacing the entire filter assembly. This segmentation enables maintenance of high throughput while simplifying filter replacement operations.
Solution Approach 2:
The filter frame is designed with a universal structure that can accommodate different types and configurations of filters through standardized mounting mechanisms. This multi-functionality allows the same frame to support various filter arrangements optimized for different production requirements.
2Manufacturing precision
If complex filter structures are used to produce complex doping profiles, then doping precision improves, but handling difficulty increases and costs rise
Solution Approach 1:
Complex doping profiles are achieved by combining multiple simpler filters with different transmission characteristics rather than using a single complex filter. Each individual filter can be independently optimized and handled, reducing handling difficulty while maintaining overall doping precision through their combined effect.
Solution Approach 2:
Multiple filters with different functional characteristics are combined in parallel within a single frame to achieve complex doping profiles that would be difficult to obtain with a single filter. This merging approach maintains precision while improving handling through modular construction.
3Productivity
If high ion currents are used to increase throughput, then productivity improves, but filter heating increases reducing service life
Solution Approach 1:
The total ion current is distributed across multiple parallel filters rather than concentrating it on a single filter. This segmentation reduces the thermal load on each individual filter, extending service life while maintaining high overall throughput through the combined capacity of all filters.
Solution Approach 2:
The modular filter design allows individual filters to be replaced independently when they reach their service life limit, while the remaining filters continue operation. This approach maximizes the utilization of the filter array and maintains high throughput by recovering the operational capacity of remaining filters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the production of semiconductor components with precise, complex doping profiles and high throughput, reducing production costs and improving handling ease, while maintaining lateral homogeneity and extending the filter's service life through efficient cooling and monitoring systems.
Implementation Method 1
the filter is irradiated by the ion beam passing through the filter to the wafer
Data Source
AI summary
A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.