Overlapped Energy Filter Support for Stable Ion Implantation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Ion implantation devices face challenges in mechanical and thermomechanical stability due to localized heating and thermal stress, leading to defects and material modifications during the ion implantation process, particularly with pulsed or scanned ion beams.

Innovation Solution

The implementation of an ion implantation device with an energy filter supported by a support element that overlaps part of the energy filter, providing enhanced mechanical and thermomechanical stability by absorbing energy and reducing thermal gradients, and the use of multiple energy filters with different orientations supported by a single support element to improve depth profile control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the energy filter is used with pulsed or scanned ion beams, then the depth profile control is improved, but the mechanical and thermomechanical stability deteriorates due to localized heating and thermal stress

Engineering Contradiction:

Improvedepth profile controlVSAvoidmechanical and thermomechanical stability

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

A support element is introduced as an intermediary component between the ion beam and the energy filter. This support element absorbs localized heating and thermal stress from pulsed or scanned ion beams, preventing direct thermal damage to the energy filter while maintaining the depth profile control functionality through the filter's micro-structured design

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The support element is positioned in advance to overlap with the energy filter, creating a protective buffer zone before thermal damage can occur. This beforehand cushioning absorbs the thermal shock and mechanical stress from pulsed ion beams, preventing defects and material modifications in the energy filter

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Strength

If the support element overlaps the energy filter, then the mechanical stability is improved, but the energy filter area is reduced

Engineering Contradiction:

Improvemechanical stabilityVSAvoidenergy filter area

Core Design Contradiction:

StrengthVSArea of stationary object

Solution Approach 1:

The support element is designed with specific dimensional characteristics (height and width) that are optimized to provide mechanical support only in regions where structural reinforcement is needed, while leaving the active energy filtering areas uncovered. This local quality approach ensures mechanical stability without significantly reducing the functional energy filter area

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the mechanical and thermomechanical stability of the energy filter, reducing the risk of defects and material modifications, while allowing for more precise control over the depth profiles in ion implantation processes, especially with pulsed or scanned ion beams.

Implementation Method 1

providing enhanced mechanical and thermomechanical stability by absorbing energy and reducing thermal gradients

Methodology Applied

Scientific EffectEnergy absorption: Absorption (EM radiation)

Implementation Method 2

the energy of a monoenergetic ion beam is modified as the monoenergetic ion beam passes through a micro-structured energy filter component

Methodology Applied

Scientific EffectEnergy modification through material interaction: Absorption (physical)

Data Source

PatentUS20240038491A1Ion implantation device with an energy filter and a support element for overlapping at least part of the energy filter

Publication Date: 2024.02.01 MI2 FACTORY GMBH

AI summary

An ion implantation device (20) is provided comprising an energy filter (25) with at least one filter layer (32) and at least one support element (30) for supporting the energy filter (25), wherein the at least one support element (30) overlaps at least part of the energy filter (25).