Enhanced Low-k Spacer for Parasitic Capacitance Reduction
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Solution Overview
Problem
As semiconductor devices with reduced footprints increase, parasitic capacitance between the gate conductor and source/drain contacts becomes a significant issue due to the close proximity of metal gate conductors, which conventional low-k dielectric materials fail to adequately mitigate effectively.
Innovation Solution
The implementation of enhanced low-k spacers formed by a stacked arrangement of dielectric and ferroelectric materials between the gate and source/drain contacts, which can achieve a dielectric constant lower than conventional materials and even air, effectively reducing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If gate pitch dimensions are reduced to decrease device footprint, then device area is reduced, but parasitic capacitance between gate conductor and source/drain contacts increases
Solution Approach 1:
The patent applies composite materials by stacking a low-k dielectric material (k=3 to 7) with a ferroelectric material to form an enhanced low-k spacer structure. This composite structure achieves an effective dielectric constant lower than either individual material, reducing parasitic capacitance between the gate conductor and source/drain contacts while maintaining the reduced gate pitch dimensions.
2Object-generated harmful factors
If conventional low-k dielectric materials are used to reduce parasitic capacitance, then dielectric constant is reduced, but capacitance mitigation effectiveness is insufficient
Solution Approach 1:
The patent changes the dielectric parameter by combining a low-k dielectric material with a ferroelectric material in a stacked configuration. This parameter change creates an enhanced low-k spacer with effective dielectric constant lower than conventional low-k materials, achieving superior capacitance mitigation effectiveness and reliable electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces parasitic capacitance, bringing the total capacitance of the enhanced low-k spacer stack to approximately zero, thereby minimizing electrical interference and improving device performance.
Implementation Method 1
The enhanced low-k spacer includes a stacked arrangement of a dielectric material and a ferroelectric material
Data Source
AI summary
A semiconductor device includes a semiconductor substrate including a channel region and a source/drain region, and an electrically conductive gate on an upper surface of the channel region. An electrically conductive source/drain contact is on an upper surface of the source/drain region. The semiconductor device further includes enhanced low-k spacer on an upper surface of the substrate and interposed between the electrically conductive gate and the electrically conductive source/drain contact. The enhanced low-k spacer includes a stacked arrangement of a dielectric material and a ferroelectric material.