Enriched Metal Oxide Surface Formation for Semiconductor Devices
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Solution Overview
Problem
The existing methods for forming metal oxide surfaces in semiconductor devices result in substantial oxygen diffusion and penetration into the metal layer during dielectric etching, leading to reduced metal availability for assembly plating and wire bonding, and retrograde profiles due to extensive metal oxide formation and removal.
Innovation Solution
A method involving the oxidation, reduction, and re-oxidation of the metal oxide surface to enrich it with metal oxide in its higher oxidation state, limiting oxygen diffusion and penetration, and maintaining a stable metal oxide layer that protects the underlying metal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the metal layer is exposed to oxygen during dielectric etching to form metal oxide, then the metal oxide surface is formed, but substantial diffusion and penetration of oxygen into the metal layer occurs, reducing metal availability for assembly plating and wire bonding
Solution Approach 1:
A preliminary metal oxide layer is formed on the metal layer surface before dielectric etching. This pre-formed oxide layer acts as a protective barrier that limits subsequent oxygen diffusion and penetration into the metal layer during the etching process, thereby preventing metal loss while still allowing the necessary metal oxide surface to be formed
Solution Approach 2:
The process is performed in a controlled atmosphere that limits oxygen exposure to only what is necessary for forming the metal oxide surface. By controlling the atmospheric conditions during dielectric etching, unnecessary oxygen diffusion into the metal layer is prevented, reducing metal loss while maintaining the required metal oxide surface formation
2Manufacturing precision
If extensive metal oxide formation and removal is performed, then the metal oxide surface is created, but retrograde profiles are formed in the structure, reducing metal available for assembly plating and wire bonding
Solution Approach 1:
The metal oxide layer is formed preliminarily before dielectric etching, establishing a stable surface layer that prevents the formation of retrograde profiles during subsequent processing. This preliminary formation eliminates the need for extensive oxide formation and removal cycles that would otherwise cause metal loss and profile degradation
3Manufacturing precision
If the metal layer is exposed to oxygen to form metal oxide, then the oxide surface is created, but the metal layer is damaged from the oxygen exposure
Solution Approach 1:
A metal oxide layer is formed preliminarily on the metal layer surface before dielectric etching. This pre-formed oxide layer serves as a protective barrier that prevents direct oxygen exposure to the underlying metal layer during subsequent processing, thereby maintaining metal layer integrity while still providing the necessary oxide surface
Solution Approach 2:
The process utilizes a controlled atmosphere that limits oxygen exposure to only the extent necessary for forming the metal oxide surface. This controlled environment prevents excessive oxygen penetration that would damage the metal layer, thereby maintaining both the oxide surface and metal layer reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The enriched metal oxide surface is more stable, reducing net oxidation over time and preserving the metal layer, thus minimizing metal loss and preventing retrograde profiles, enhancing the semiconductor device's performance.
Implementation Method 1
reducing the metal oxide surface, wherein the reduced metal oxide surface comprises metal oxide in a first oxidation state and metal atom; and re-oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state
Data Source
AI summary
Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.