ENZ Near Field Lens for Subwavelength Imaging Resolution

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Solution Overview

Problem

Optical microscopes face limitations in observing objects smaller than half a wavelength of light due to the majority of scattered light being near-field light that remains near the object, making it difficult to achieve high resolution and sensitivity, especially with existing near-field scanning optical microscopy (NSOM) equipment and meta-materials being complex to fabricate and utilize.

Innovation Solution

A near-field lens comprising an epsilon near zero (ENZ) material layer with a dielectric constant close to zero, integrated with a substrate, which enables the transmission of near-field light to a far field, enhancing resolution and sensitivity, and a near-field imaging apparatus that includes a light source, optical lens, and image sensor to capture and process the transmitted light.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If near field scanning optical microscopy (NSOM) equipment is used to achieve high resolution, then resolution is improved, but productivity is worsened due to scanning one point at a time

Engineering Contradiction:
ImproveresolutionVSAvoidimaging speed
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent divides the imaging process into two functional components: a near field lens for wide-area parallel light collection and an optical lens for focusing. This segmentation allows simultaneous imaging of multiple points while maintaining high resolution, overcoming the sequential scanning limitation of NSOM

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a near field lens as an intermediary component between the object and the optical lens. This near field lens converts near field light into far field light, enabling the optical lens to focus the light and form images without requiring point-by-point scanning

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If meta-material is used to create a super lens for resolving the diffraction limit, then resolution is improved, but device complexity is worsened due to complicated structure

Engineering Contradiction:
ImproveresolutionVSAvoidstructure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent changes the optical parameters of the lens system by using a near field lens with specific refractive index properties. This allows the lens to focus near field light without requiring the complex subwavelength structures of meta-materials, simplifying the device while achieving super-resolution

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts the near field light collection function from the complex meta-material structure and implements it through a simpler near field lens design. This extraction maintains the resolution-enhancing capability while eliminating the fabrication complexity of meta-materials

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed solution allows for high-resolution imaging of subwavelength objects by effectively transmitting near-field light to a far field, improving the resolution and sensitivity of imaging systems, and simplifying the structure and fabrication process compared to meta-materials, while maintaining unique optical properties.

Implementation Method 1

an epsilon near zero (ENZ) material layer, which is arranged on the substrate and is formed of a material with a dielectric constant that includes a real part having a value of zero or a value very close to zero

Methodology Applied
Scientific EffectEpsilon near zero (ENZ) effect:

Data Source

PatentUS10205864B2Near field lens and imaging apparatus including same
Publication Date: 2019.02.12 SAMSUNG ELECTRONICS CO LTD
  • US10205864B2 patent drawing
  • US10205864B2 patent drawing
  • US10205864B2 patent drawing

AI summary

A near field light includes a substrate; and an epsilon near zero (ENZ) material layer, which is arranged on the substrate and is formed of a material with a dielectric constant that includes a real part having a value of zero or a value very close to zero with respect to a light of a designated wavelength.