Epi Isolation Plate with Purge Flow Tuning for Uniform Deposition
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Solution Overview
Problem
The deposition of materials on semiconductor substrates often results in non-uniform thickness, affecting the performance of final manufactured devices due to inefficiencies in existing process chamber components and methods.
Innovation Solution
A method and apparatus for introducing purge gas into a processing chamber using an isolation plate and parallel blocks to control gas flow, including perforations that guide process gases and purge gases to enhance deposition uniformity and reduce contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If material is deposited on the substrate surface using lateral flow chamber method, then material deposition is achieved, but the deposited material is non-uniform in thickness
Solution Approach 1:
The processing chamber is segmented into multiple zones using an isolation plate with perforations and parallel blocks with flow paths. This segmentation allows different regions to have controlled gas flow characteristics, enabling uniform material deposition across the substrate surface by creating distinct deposition and purge zones.
Solution Approach 2:
The isolation plate and parallel blocks create localized flow conditions with different gas velocities and concentrations at different locations. The perforations and flow paths are designed to provide tailored gas distribution, ensuring optimal deposition uniformity across the substrate while maintaining high productivity.
2Object-affected harmful factors
If purge gas is introduced to reduce material deposition on internal surfaces, then contamination is reduced, but gas flow control complexity increases
Solution Approach 1:
The isolation plate with perforations acts as an intermediary component between the substrate and the chamber walls. It controls purge gas flow to prevent material deposition on internal surfaces while maintaining a relatively simple overall structure. The parallel blocks provide additional flow control without requiring complex mechanisms.
3Manufacturing precision
If process gas flow is guided through space between isolation plate and substrate, then deposition uniformity is improved, but the space requirement increases
Solution Approach 1:
The isolation plate and parallel blocks create a three-dimensional flow structure with vertical and horizontal components. By utilizing the space between the isolation plate and substrate in the vertical dimension, the design achieves improved deposition uniformity without significantly increasing the horizontal footprint of the chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves deposition uniformity and reduces material deposition on internal surfaces, enhancing the performance of semiconductor devices by minimizing non-uniformities and increasing throughput.
Implementation Method 1
flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate
Implementation Method 2
flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate including guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate
Implementation Method 3
thermally decomposing the process gas to deposit a material from the gas onto the substrate surface
Data Source
AI summary
A method and apparatus for processing substrates suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes flowing a purge gas over an isolation plate disposed above the substrate, the flowing the purge gas including diverting a portion of the purge gas below the isolation plate through a plurality of perforations in the isolation plate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate comprising guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.